BL
GALAXY ELECTRICAL
TELECOMMUNICATION PROTECTION
FEATURES
Bidirectional
crowbar protection
Voltage
range:from
62V
to
270V.
Holding
current:I
H
=150mA min
SMTPB---SERIES
BREAKDOWN VOLTAGE: 62 --- 270 V
POWER
DISSIPATION: 5.0
W
SMB
4.
5±
0.
1
5
2.0± 0.15
3.
5±
0.
2
5.
3
± 0.2
1.
25±
0.2
0.203MAX
0.2± 0.05
Repetitive
peak pulse
current:I
PP
=100A,10/1000 s.
2.3± 0.15
DESCRIPTION
The
SMTPB
series are designed
for protecting sensitive
telecommunication equipment
against lightning and
transient voltages induced by AC
power lines.
The
devices provide bidirectional protection by crowbar
action.Their characteristic response to transien
over-
voltages
makes them particularly suited to
protect volatge
sensitive telecommunication equipment.
Dimensions in millimeters
SCHEMATIC DIAGRAM
Complies
with the
Peak
surge
voltage
(V)
Voltage
waveform
Current
waveform
(
s)
Admissible
Ipp
(A)
Necessary
resistor
(
)
following standards:
(
s)
CCITTK20
VDE0433
VDE0878
IEC-1000-4-5
FCC Part 68,lightning surge type A
FCC Part 68,lightning surge type B
BELLCORE TR-NWT-001089 First level
BELLCORE TR-NWT-001089 Second
level
CNET131-24
4000
4000
4000
IeveI
4
IeveI 4
1500
800
100
2500
1000
500
4000
10/700
10/700
1.2/50
10/700
1.2/50
10/160
10/560
5/320
2/10
10/1000
2/10
0.5/700
5/310
5/310
1/20
5/310
8/20
10/160
10/560
5/320
2/10
10/1000
2/10
0.8/310
100
100
100
100
100
200
100
25
500
100
500
100
--
--
--
--
--
--
--
--
--
--
--
--
www.galaxycn.com
Document Number 0286006
BL
GALAXY ELECTRICAL
1.
BL
GALAXY ELECTRICAL
ABSOLUTE MAXIMUM RATINGS (T
A
=25
Symbol
P
Ipp
I
TSM
It
dV/dt
T
stg
T
j
T
L
2
SMTPB---SERIES
)
Parameter
Power dissipation on infinite heatsink
Peak pulse current
Non repetitive surge peak on-state current
I t vallue for fusing
Critical rate of rise of off-state voltage
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s at 5mm form case
2
Value
T
amb
=50
10/1000 s
8/20 s
2/10 s
tp=20ms
tp=20ms
V
RM
5.0
100
150
500
50
25
5
-55to+150
150
230
Unit
W
A
A
As
kV/µS
2
THERMAL RESISTANCES
Symbol
R
th
(j-l)
R
th
(j-a)
Junction to leads (L
lead
=10m m )
Junction to am bient
on
printed circuit (L
lead
=10m m )
Parameter
Value
20
75
Unlt
/W
/W
Type
I
RM
@ V
RM
max.
A
V
56
61
90
108
117
162
180
198
216
243
V
R
@
I
R
min.
note1
V
µA
62
68
100
120
130
180
200
220
240
270
50
50
50
50
50
50
50
50
50
50
V
BO
@ I
BO
max.
note2
V
mA
82
90
133
160
173
240
267
293
320
360
800
800
800
800
800
800
800
800
800
800
I
H
min.
note3
mA
150
150
150
150
150
150
150
150
150
150
C
max.
note4
P
F
300
300
200
200
200
200
200
200
200
200
SMTPB62
SMTPB68
SMTPB100
SMTPB120
SMTPB130
SMTPB180
SMTPB200
SMTPB220
SMTPB240
SMTPB270
2
2
2
2
2
2
2
2
2
2
ELECTRICAL CHARACTERISTICS (T
A
=25
I
I
PP
)
Symbol
Parameter
V
RM
Stand-off voltage
I
RM
Leakage current at stand-off voltage
V
R
V
V
RM
V
BR
V
BO
I
BO
I
H
I
R
I
RM
Continuous
reverse
voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
V
BR
V
BO
I
H
I
BO
I
PP
C
Note1:I
R
measured at V
R
guarantees V
BRmin
≥V
R
Note3: See test circuit2.
Note 2:Measured at 50H
z
(1 cycle)-See test circuit 1.
www.galaxycn.com
Note4: V
R
=1V,F=1MHz,refer to fig.3 for C versus V
R
.
Document Number 0286006
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
TEST CIRCUIT 1 FOR I
BO
AND V
BO
PARAMETERS:
tp=20ms
Auto
Transformer
220V/2A
R1
140
R2
240
k
220V
SMTPB---SERIES
static
relay.
Vout
I
BO
measure
D.U.T
V
BO
measure
TEST PROCEDURE :
Transformer
220V/800V
5A
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Sw itchK is closed
- For Unidirectional devices = Sw itch K is open.
V
OUT
Selection
- Device w ith V
BO
< 200 Volt
- V
OUT
= 250 V
RMS
, R1 = 140
Ω.
- Device w ith V
BO
200 Volt
- V
OUT
= 480 V
RMS
, R2 = 240Ω.
TEST CIRCUIT 2 FOR I
H
PARAMETER:
R
V
BAT
=-48V
D.U.T.
Vp
Surge generator
This is a GO-NO GOTest which allows to confirm the holding current (I
H
) level in a functionaltest
circuit.
TEST PROCEDURE :
1) Adjust the current level at the I
H
value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge
current
: Ipp = 10A , 10/1000µ s.
3) The D.U.T will come back off-state within 50ms max.
www.galaxycn.com
Document Number 0286006
BL
GALAXY ELECTRICAL
3.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE
VVVVVV
CURRENT VERSUS OVERLOAD DURATION
VV
(T
J
INItIAL=25°C).
ITSM(A)
F=50H
z
SMTPB---SERIES
FIG.2 -- RELATIVE VARIATION OF HOLDING
DDDD DCURRENT
VERSUS JUNCTION
SSSS CTEMPERATURE.
2.0
IH[TJ]/IH[TJ=25
℃]
1.8
1.6
1.4
1.2
1.0
60
30
0.8
0.6
0.4
TJ(℃)
0.2
t(s)
0
0.0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
-40
-20
0
20
40
60
80
100
FFFFFIG.3
-- RELATIVE VARIATION OF JUNCTION
VVVVVVVV
CAPACITANCE VERSUS REVERSE
BBBBBBBB
APPLIED VOLTAGE
C[VR]/C[VR=1V]
1.0
FIG.4 -- ON-STATE CURRENT VERSUS ON-STATE
YY
YYY
VOLTAGE
I
T
(A)
100
F=1MH
Z
T
J
=25℃
0.5
10
0.2
V
R
(V)
0.1
1
10
100
300
1
0
1
2
3
4
V
T
(V)
5
6
7
8
9
10
FIG.5 -- TRANSIENT THERMAL IMPEDANCE JUNCTION TO AMBIENT VERSUS PULSE DURATION
ZTH(J-a)(
100
/
W)
10
1
tp(s)
0.1
0.01
0.1
1.0
10
100
1000
5000
www.galaxycn.com
Document Number 0286006
BL
GALAXY ELECTRICAL
4.
京公网安备 11010802033920号
EEWORLD
