v02.0701
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz
Features
8
AMPLIFIERS - SMT
Typical Applications
• 2.6 - 2.7 GHz MMDS
The HMC279MS8G is ideal for:
• 3.5 GHz Wireless Local Loop
• 3.7 - 4.2 GHz Satellite
(Receive and Transmit Bands)
Functional Diagram
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High Gain: 36 dB
Psat Output Power: +14 dBm
Single Supply: +3V @ 60 mA
Ultra Small Package: MSOP8G
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No External Matching Required
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General Description
for
d
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HMC279MS8G is a +3V GaAs MMIC driver
The
men
er covering the 2.5 - 4.2 GHz frequency
amplifi
com
range. The device is packaged in a low cost, sur-
t Re
o
face mount MSOP plastic package with an exposed
N
base paddle for improved RF ground. The ampli-
fier provides greater than 36dB gain and +14 dBm
P1dB while operating from a single +3V supply at
only 60mA. No external components are required
and the amplifier occupies less than 0.023 sq. in.
(14.6 sq. mm). All data is taken with the ampli-
fier assembled into a 50 ohm test fixture with the
exposed ground paddle connected to RF ground.
Electrical Specifi cations,
T
A
= +25° C, Vdd= +3V
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
5
5
44
8
11
17
33
Min.
Typ.
2.5 - 3.7
36
±0.03
10
9
52
12
14
22
5
60
8
40
±0.045
6
8
42
9
11
15
35
Max.
Min.
Typ.
3.7 - 4.2
38
±0.03
11
13
48
12
14
20
5
60
8
41
±0.045
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
8-1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v02.0701
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz
Gain vs. Temperature
44
42
40
38
36
34
32
30
28
26
24
22
20
Broadband Gain & Return Loss
45
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
1
S11
S21
S22
2
3
4
FREQUENCY (GHz)
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6
2
2.5
3
0
INPUT RETURN LOSS (dB)
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Des
+25 C
-40 C
+85 C
3.5
4
4.5
5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40 C
-40
+85 C
-50
-60
+25 C
-70
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
Input Match vs. Temperature
+25 C
-40 C
+85 C
-5
-10
-15
-20
-25
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
Output Match vs. Temperature
0
OUTPUT RETURN LOSS (dB)
8
NOISE FIGURE (dB)
-5
6
-10
4
+25 C
-40 C
+85 C
-15
+25 C
-40 C
+85 C
2
-20
0
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
-25
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-2
AMPLIFIERS - SMT
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GAIN (dB)
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RESPONSE (dB)
v02.0701
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz
Power Compression @ 4 GHz
20
8
AMPLIFIERS - SMT
Power Compression @ 3.5 GHz
20
15
10
5
0
-40
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45
40
OUTPUT POWER (dBm)
15
35
10
-35
-30
-25
INPUT POWER (dBm)
45
OUTPUT POWER (dBm)
40
GAIN (dB)
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30
5
-20
25
-15
0
-40
-35
-30
17
16
15
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Des
-25
-20
GAIN (dB)
35
30
25
-15
INPUT POWER (dBm)
Psat vs. Temperature
17
16
15
14
13
12
11
10
9
2
2.5
3
3.5
4
4.5
5
+25 C
-40 C
+85 C
P1dB vs. Temperature
P1dB (dBm)
Psat (dBm)
14
13
12
11
10
9
2
2.5
3
+25 C
-40 C
+85 C
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
Frequency (GHz)
Temperature
-40 °C
+25 °C
+85 °C
All levels in dBm
3.4
23.80
24.00
25.58
3.8
22.13
23.42
24.83
4.2
23.92
20.82
22.23
Spur Data @ P1dB Output (3.8 GHz)
Spur Data at P1dB
2FO
-31
3FO
-46.5
4FO
-56.5
5FO
-92.3
6FO
-102.33
All power levels are in dBc with respect to the output power (FO)
8-3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v02.0701
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8.0 Vdc
-10 dBm
RF Input Power (Vdd = + 3.0 Vdc)
Channel Temperature
150 °C
1.3 W
Continuous Pdiss (T = 85 °C)
(derate 20 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
50 °C/W
-65 to +150 °C
-40 to +85 °C
Operating Temperature
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Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-4
AMPLIFIERS - SMT
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v02.0701
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
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List of Material
Item
J1, J2
J3
U1
PCB*
Description
PC Mount SMA Connector
DC Pin
HMC279MS8G Amplifier
102810 Evaluation Board
*Circuit Board Material: Roger 4350
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and exposed paddle
should be connected directly to the ground
plane similar to that shown. A sufficient number
of VIA holes should be used to connect the top
and bottom ground planes. The evaluation cir-
cuit board shown is available from Hittite upon
request.
8-5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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