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VS1664648041BTGA-8L

Description
Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168
Categorystorage    storage   
File Size188KB,15 Pages
ManufacturerVanguard International Semiconductor Corporation
Websitehttp://www.vis.com.tw/
Download Datasheet Parametric View All

VS1664648041BTGA-8L Overview

Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168

VS1664648041BTGA-8L Parametric

Parameter NameAttribute value
MakerVanguard International Semiconductor Corporation
Parts packaging codeDIMM
package instructionDIMM,
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
memory density1073741824 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
VIS
Description
Preliminary
VS864648041B,VS1664648041B
8M,16MX64-Bit
SDRAM Module
The VS864648041B and VS1664648041B are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous
DRAM Module (DIMM). It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041BT) with 4
banks and in standard 54 pin TSOP-II package. Decoupling capacitors are mounted on power supply line for
noise reduction. The module use serial presence detects implemented via a 2K-bit EEPROM component.
Features
VS864648041B, VS1664648041B :
• Comply to Intel PC100 specification
• Single 3.3V (
±
0.3V
) power supply
• Utilizes -8H, -8L and -10 SDRAM components
• 8M x 64 bit (VS864648041B) and 16M x 64 bit (VS1664648041B) options
• Fully synchronous with all signals referenced to a positive clock edge
• Non-Buffered
• Programmable burst length (1,2,4,8 & Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• I/O level : LVTTL interface
• Random column access in every cycle
• 4096 refresh cycles / 64ms
• Serial Presence Detect (SPD) with EEPROM
• JEDEC standard pinout
• Performance Options (at 100MHz; units: clock)
Marking
-8H
-8L
-10
SDRAMs
-8H
-8L
-10
CL
2
3
3
T
RCD
2
2
3
T
RP
2
2
3
T
RC
7
7
8
Document:1G5-0115
Rev.4
Page 1
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