CYT7090LD
SURFACE MOUNT
DUAL, ISOLATED
LOW VCE(SAT) PNP
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT7090LD
consists of two (2) isolated Low VCE(SAT) PNP Power
Transistors packaged in an epoxy molded SOT-228
surface mount case.
MARKING: FULL PART NUMBER
SOT-228 CASE
APPLICATIONS:
•
DC/DC Converters (low and medium power)
•
Power Management
•
Supply Line Switching
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
Low Saturation Voltage, 750mV MAX @ IC=2.0A
•
High Current, IC=3.0A
•
Efficient Dual Device Package
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
W
°C
°C/W
50
40
5.0
3.0
5.0
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
VCB=30V
VCB=30V, TA=100°C
VEB=4.0V
IC=100µA
IC=10mA
IE=100µA
IC=500mA, IB=5.0mA
IC=1.0A, IB=10mA
IC=2.0A, IB=50mA
IC=1.0A, IB=10mA
VCE=2.0V, IC=10mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=2.0A
VCE=5.0V, IC=50mA, f=50MHz
300
250
200
150
100
50
40
5.0
100
175
250
0.8
250
450
750
1.0
800
100
10
100
UNITS
nA
µA
nA
V
V
V
mV
mV
mV
V
MHz
R1 (23-February 2010)
CYT7090LD
SURFACE MOUNT
DUAL, ISOLATED
LOW VCE(SAT) PNP
SILICON POWER TRANSISTORS
SOT-228 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Collector Q1
2) Collector Q1
3) Collector Q2
4) Collector Q2
5)
6)
7)
8)
Emitter Q2
Base Q2
Emitter Q1
Base Q1
MARKING: FULL PART NUMBER
R1 (23-February 2010)
w w w. c e n t r a l s e m i . c o m
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