-100mA/-50V Digital transistors(with built-in resistors)
DTA044TM / DTA044TEB / DTA044TUB
Features
1) Built-in input resistor enables the direct control of base terminal
by input voltage without external resistor.
(See Inner circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
VMT3
Abbreviated symbol : 08
EMT3F
(3)
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
UMT3F
(1)
(2)
Abbreviated symbol : 08
Applications
Inverter, Interface, Driver
2.1
2.0
0.32
0.9
0.53
0.425
(3)
1.25
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 08
Packaging
specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTA044ＴM
DTA044ＴEB
DTA044ＴUB
Inner
circuit
VMT3
Taping
T2L
8000
○
-
-
EMT3F
Taping
TL
3000
-
○
-
UMT3F
Taping
TL
3000
-
-
○
R
1
B
B : Base
C : Collector
E : Emitter
C
E
R
1
=47kΩ
Absolute
maximum
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation *1
Junction temperature
Range of storage temperature
*1 Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C(max)
P
D
T½
Tstg
M
Limits(DTA044T□)
EB
UB
-50
-50
-5
-60
150
150
-55 to +150
200
Unit
V
V
mA
mA
mW *
C
C
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©2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.09 - Rev.A
0.53
0.425
DTA044TM / DTA044TEB / DTA044TUB
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
½
FE
V
CE(sat)
fr
Cob
Min.
-50
-50
-5
-
-
-
100
-
32.9
Typ.
-
-
-
-
-
-0.07
-
250
47
Max.
-
-
-
-500
-500
-0.15
600
-
61.1
Unit
V
V
V
nA
nA
V
-
MHz
kΩ
Test Conditions
I
C
=50μA
I
C
=1½A
I
E
=50μA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA / I
B
=-0.5mA
V
CE
=-10V / I
C
=-5mA
V
CE
=-10V / I
E
=5mA
f=100MH½
Data Sheet
Electrical
characteristics curves
COLLECTOR SATURATION VOLTAGE :
V
CE(sat)
(V)
1000
V
CE
=-10.0V
DC CURRENT GAIN : h
FE
-1
I
C
/I
B
=10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
100
-0.1
10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
-0.01
1
-0.1
-1
-10
-100
-0.001
-0.01
-0.1
-1
-10
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRNET : I
C
(mA)
Fig.1 DC Current Gain vs. Collector Current
Fig.2 Collector Saturation Voltage vs. Collector Current
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©2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.09 - Rev.A
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