Data Sheet
100mA/50V Digital transistors(with built-in resistors)
DTC043ZM / DTC043ZEB / DTC043ZUB
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See Equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
VMT3
Abbreviated symbol : 42
EMT3F
(3)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
(1)
(2)
Abbreviated symbol : 42
UMT3F
2.0
0.32
0.9
0.53
0.425
(3)
Applications
Inverter, Interface, Driver
1.25
2.1
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 42
Packaging
specifications and h
FE
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTC043ZM
DTC043ZEB
DTC043ZUB
Equivalent
circuit
VMT3
Taping
T2L
8000
○
-
-
EMT3F
Taping
TL
3000
-
○
-
UMT3F
Taping
TL
3000
IN
OUT
GND
R
1
IN
R
2
GND
OUT
-
-
○
R
1
=4.7k, R
2
=47k
Absolute
maximum
(Ta=25C)
Parameter
Supply voltage
Input voltage
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
Symbol
V
CC
V
IN
I
C(max)
I
O
P
D
Tj
Tstg
M
Limits(DTC043Z□)
EB
UB
50
30
-5
100
100
150
150
-55 to +150
200
0.53
0.425
Unit
V
V
V
mA
mA
mW
C
C
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.09 - Rev.A
DTC043ZM / DTC043ZEB / DTC043ZUB
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency *
Input resistance
Resistance ratio
* Characteristics of built-in transistor
Typ.
-
-
0.05
-
-
-
250
4.7
10
Max.
0.5
-
0.15
1.8
500
-
-
6.11
12
Unit
V
V
V
mA
nA
-
MHz
k
-
Test Conditions
V
CC
=5V / I
O
=100uA
V
O
=0.3V / I
O
=5mA
I
O
=5mA / I
I
=0.5mA
V
I
=5V
V
CC
=50V / V
I
=0V
V
O
=10V / I
O
=5mA
V
CE
=10V /I
E
=-5mA
f=100MHz
Data Sheet
Min.
-
1.1
-
-
-
80
-
3.29
8
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Electrical
characteristics curves
100
V
O
=0.3V
OUTPUT CURRENT : I
O
(mA)
INPUT VOLTAGE : V
I(on)
(V)
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
10
V
CC
=5V
10
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
1
0.01
0.1
0.1
1
10
100
OUTPUT CURRENT : I
O
(mA)
0.001
0
0.5
1
1.5
2
2.5
3
INPUT VOLTAGE : V
I(off)
(V)
Fig.1 Input Voltage vs. Output Current
(ON characteristics)
1000
OUTPUT VOLTAGE : V
O(on)
(V)
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
V
O
=10V
Fig.2 Input Voltage vs. Output Current
(OFF characteristics)
1
I
O
/I
I
=10
DC CURRENT GAIN : G
I
100
0.1
10
0.01
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
1
0.1
1
10
100
OUTPUT CURRENT : I
O
(mA)
0.001
0.1
1
10
100
OUTPUT CURRNET : I
O
(mA)
Fig.3 DC Current Gain vs. Output Current
Fig.4 Output Voltage vs. Output Current
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© 2011 ROHM Co., Ltd. All rights reserved.
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2011.09 - Rev.A
Notice
Notes
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