Ordering number :EN5961
NPN Triple Diffused Planar Silicon Transistor
TS7992
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm
2039D-TO3PML
[TS7992]
ø3.4
16.0
5.6
3.1
5.0
8.0
21.0
22.0
4.0
2.8
2.0
2.0
20.4
1.0
0.6
1
2
3
5.45
5.45
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25˚ C
Tj
Tstg
Conditions
Ratings
1600
800
6
20
40
3.0
75
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
ICES
VCE=1600V, RBE=0
800
1.0
10
15
4
30
7
5
1.5
3.0
0.2
V
V
µs
µs
Conditions
Ratings
min
typ
max
1.0
Unit
mA
V
mA
µA
VCEO
(SUS)
IC=100mA, IB=0
IEBO
VEB=4V, IC=0
ICBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=14A
IC=14A, IB=3.5A
IC=14A, IB=3.5A
IC=12A, IB1=2.0A, IB2=–5.0A
IC=12A, IB1=2.0A, IB2=–5.0A
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1620 No.5961-1/3
3.5
2.0
TS7992
Switching Time Test Circuit
PW=20µs
DC≤1%
INPUT
RB
VR
50Ω
+
100µF
+
470µF
RL=16.7Ω
IB1
IB2
OUTPUT
VBE=–2V
VCC=200V
20
18
I
C
- V
CE
5.0A
4.5A
4.0A
3.5A
20
18
I
C
- V
BE
V
CE
=5V
Collerctor Current, I
C
– A
14
12
10
8
6
4
2
3.0A
2.5A
2.0A
1.5A
Collerctor Current, I
C
– A
16
16
14
12
10
1.0A
20˚
C
0.2
0.4
0.6
0.5A
8
6
4
2
I
B
=0
0
0
1
2
3
4
5
6
7
8
9
10
0
0
Ta=
1
0.8
–40
˚C
1.0
25˚C
1.2
Collector-to-Emitter Voltage, V
CE
– V
100
7
5
Base-to-Emitter Voltage, V
BE
– V
10
7
I
C
/
I
B
=5
5
h
FE
- I
C
V
CE
=5V
V
CE
(
sat
)
- I
C
Collector-to-Emitter
Saturation Voltage, V
CE(sat)
– V
DC Current Gain, h
FE
3
2
10
7
5
3
2
1.0
0.1
Ta=120˚C
25˚C
–40˚C
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
Ta=–40˚C
120˚C
25˚C
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, I
C
– A
7
5
Collector Current, I
C
– A
10
7
SW Time - I
C
t
stg
SW Time - I
B2
t
stg
V
CC
=200V
I
C
=12A
I
B1
=2A
R
load
Switching Time, SW Time –
µs
3
2
1.0
7
5
3
2
Switching Time, SW Time –
µs
5
3
2
1.0
7
5
3
2
0.1
7
7
t
f
t
f
V
CC
=200V
0.1
I
C/
I
B1
=6
I /I =2.5
7
B2 B1
R
load
5
7
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
0.1
2
3
5
7 1.0
2
3
5
7
10
2
Collector Current, I
C
– A
Base Current, I
B2
– A
No.5961-2/3
TS7992
100
7
5
I
CP
3
I
C
2
Forward Bias A S O
30
Collector Current, I
C
– A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
Tc=25˚C
2
1 pulse
0.01
2 3
1.0
=7
Collector Current, I
C
– A
P
C
5W
10
0
µ
s
0
µ
s
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
L=100µH
5
I
B2
=–5A
3
Tc=25˚C
2
0.01
1.0
Reverse Bias A S O
s
1m
10
ms
D
C
op
er
at
io
n
1 pulse
5 7 10
2
3
5 7 100
2
3
5 7 1000
2 3
5 7 10
2 3
5 7 100
2 3
5 7 1000
2 3
Collector-to-Emitter Voltage, V
CE
– V
4.0
Collector-to-Emitter Voltage, V
CE
– V
80
75
P
C
- Ta
Collector Dissipation, P
C
– W
P
C
- Tc
70
Collector Dissipation, P
C
– W
3.0
60
50
40
30
20
10
No
2.0
he
a
ts
ink
1.0
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
Case Temperature, Tc – ˚C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of April, 1998. Specifications and information herein are subject to
change without notice.
PS No.5961-3/3
京公网安备 11010802033920号
EEWORLD
