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BH6176GU_11

Description
Silicon Monolithic Integrated Circuit Power Management LSI for MultiMedia LSI on Cellular
File Size174KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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BH6176GU_11 Overview

Silicon Monolithic Integrated Circuit Power Management LSI for MultiMedia LSI on Cellular

1/4
Structure
Product
Type
Functions
Silicon Monolithic Integrated Circuit
Power Management LSI for MultiMedia LSI on Cellular
BH6176GU
・1ch
500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I2C)
・5-channel
CMOS-type LDOs. (16 steps adjustable VO by I2C, 150mA×3, 300mA×2)
・LDO
and Stepdown converter Power ON/OFF control enabled by I2C interface or external pin
・I
2C compatible Interface. (Device address is “1001111”)
・Wafer
Level CSP package(2.6mm×2.6mm) for space-constrained applications.
Absolute Maximum Ratings(Ta=25C)
Parameter
Symbol
Rating
Unit
Maximum Supply Voltage (VBAT, PBAT)
Maximum Supply Voltage (VUSB)
Maximum Supply Voltage (DVDD)
Maximum Input Voltage 1
(LX, FB, OUT1, OUT2, OUT3, OUT4, OUT5, OUT6,
EN_LD1, EN_LD2, EN_LD3, EN_LD4)
Maximum Input Voltage 2
(NRST, CLK, DATA)
Power Dissipation
VBATMAX
VUSBMAX
DVDDMAX
VINMAX1
VINMAX2
Pd
6.0
6.0
4.5
VBAT + 0.3
DVDD + 0.3
900*
1
V
V
V
V
V
mW
Operating Temperature Range
Topr
-35
½
+85
Storage Temperature Range
Tstg
-55
½
+125
*1 This is the allowable loss of when it is mounted on a ROHM specification board 60mm×60mm.
To use at temperature higher than 25C , derate 1% per 1C.
Recommended Operating Conditions (Ta=25C)
Parameter
VBAT, PBAT Voltage
VUSB Voltage
DVDD Voltage
Symbol
VBAT
VUSB
VDVDD
*
2
*
2
*
3
Range
2.20
½
5.50
2.20
½
5.50
1.70
½
4.20
Unit
V
V
V
*2 Whenever the VBAT or PBAT or VUSB voltage is under the LDO, SWREG output voltage,
the LDO and SWREG output is not guaranteed to meet its published specifications.
*3 The DVDD Voltage must be under the Battery Voltage VBAT, PBAT at any times.
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