Data Sheet
Switching Diode
DAN202UM
lApplications
High speed switching
lDimensions
(Unit : mm)
lLand
size figure
(Unit : mm)
1.3
2.0±0.1
0.32
+0.1
-0.05
0.9±0.1
1.25±0.1
2.1±0.1
lFeatures
1)Ultra small mold type. (UMD3F)
2)High reliability
0.53±0.1
0.425
(3)
0.9MIN.
Each lead has
same dimensions
0.65
0½0.1
0.8MIN
UMD3
lConstruction
Silicon epitaxial planer
(1)
0.65
0.65
(2)
0.13±0.05
1.3±0.1
0.53±0.1
0.425
lStructure
ROHM : UMD3F
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
lTaping
dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ
1.55±0.05
0.3±0.1
3.5±0.05
1.75±0.1
8.0±0.2
2.4±0.1
5.5±0.2
2.25±0.1
0
4.0±0.1
φ
0.5±0.05
0½0.1
2.4±0.1
1.25±0.1
lAbsolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive peak)
V
R
Reverse voltage (DC)
I
FM
Forward current (single)
Average rectified forward voltage (single)
Io
I
surge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
lElectrical
characteristics
(Ta=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
Ct
trr
Limits
80
80
300
100
4
200
150
-55
to
+150
Unit
V
V
mA
mA
A
mW
C
C
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
μA
pF
ns
I
F
=100mA
V
R
=70V
Conditions
V
R
=6V , f=1MHz
V
R
=6V , I
F
=5mA , R
L
=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.12 - Rev.A
1.6
各リードとも
同寸法
DAN202UM
Data Sheet
100
100000
Ta=125°C
Ta=150°C
10
FORWARD CURRENT:I
F
(mA)
10000
Ta=150°C
REVERSE CURRENT:I
R
(nA)
Ta=75°C
1000
Ta=75°C
100
Ta=25°C
10
1
Ta=125°C
0.1
Ta=25°C
0.01
1
0.001
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
0.1
0
10
20
30
40
50
60
70
80
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
10
f=1MHz
940
930
FORWARD VOLTAGE:V
F
(mV)
Ta=25°C
I
F
=100mA
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
920
910
900
890
AVE:899mV
880
870
1
0.1
0
5
10
15
20
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
860
V
F
DISPERSION MAP
50
Ta=25°C
V
R
=80V
n=10pcs
3
Ta=25°C
V
R
=6V
f=1MHz
n=10pcs
2
REVERSE CURRENT:I
R
(nA)
30
AVE:14nA
20
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
40
1
AVE:0.7pF
10
0
I
R
DISPERSION MAP
0
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.12 - Rev.A
DAN202UM
Data Sheet
20
1cyc
REVERSE RECOVERY TIME:trr(ns)
10
9
I
FSM
Ta=25°C
V
R
=6V
I
F
=5mA
R
L
=50Ω
n=10pcs
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8
7
6
5
4
3
2
1
AVE:1.93ns
15
8.3ms
10
5
AVE:3.50A
0
I
FSM
DISPERSION MAP
0
trr DISPERSION MAP
5
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
4
8.3ms
8.3ms
1cyc
3
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
100
I
FSM
t
10
2
1
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
1
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
1000
Mounted on epoxy board
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
10
9
8
7
6
5
4
3
2
1
AVE:0.97kV
AVE:2.54kV
100
Rth(j-c)
10
1
0.001
0
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.12 - Rev.A
Notice
Notes
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