Data Sheet
Switching Diode
DAP202UM
Applications
High speed switching
Dimensions
(Unit : mm)
2.0±0.1
0.32
+0.1
-0.05
Land
size figure
(Unit : mm)
0.9±0.1
各リードとも
同寸法
Each lead has
same dimensions
1.25±0.1
2.1±0.1
Features
1)Small mold, flat lead type. (UMD3F)
2)High reliability
0½0.1
(1)
0.65
0.65
(2)
0.13±0.05
Construction
Silicon epitaxial planer
0.53±0.1
0.425
0.53±0.1
0.425
(3)
Structure
1.3±0.1
ROHM : UMD3F
dot (year week factory)
Taping
dimensions
(Unit : mm)
φ1.55±0.05
2.0±0.05
4.0±0.1
1.75±0.1
0.3±0.1
3.5±0.05
5.5±0.2
0½0.5
4.0±0.1
2.2±0.08
φ0.5±0.05
2.4±0.08
8.0±0.2
1.15±0.1
Absolute
maximum ratings
(Ta=25°C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
V
R
Reverse voltage (DC)
I
FM
Forward voltage(repetitive peak)
Average rectified forward current
Io
I
surge
Surge current(t=1s)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Rated in slash put frequency
f
Electrical
characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
Ct
trr
Limits
80
80
300
100
4
200
150
- 55 to +150
100
Unit
V
V
mA
mA
A
mW/Total
°C
°C
MHz
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4.0
Unit
V
μA
pF
ns
I
F
=100mA
V
R
=70V
Conditions
V
R
=6V , f=1MHz
V
R
=6V , I
F
=5mA , R
L
=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.09 - Rev.A
DAP202UM
Data Sheet
100
100000
Ta=125°C
Ta=150°C
FORWARD CURRENT:I
F
(mA)
10
Ta=150°C
1
Ta=125°C
0.1
Ta=25°C
REVERSE CURRENT:I
R
(nA)
10000
Ta=75°C
1000
Ta=75°C
100
Ta=25°C
10
0.01
1
0.001
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
0.1
0
10
20
30
40
50
60
70
80
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
10
f=1MHz
910
Ta=25°C
I
F
=100mA
n=30pcs
900
FORWARD VOLTAGE:V
F
(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
890
1
880
AVE:884mV
870
860
0.1
0
5
10
15
20
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
850
V
F
DISPERSION MAP
50
Ta=25°C
V
R
=70V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
Ta=25°C
V
R
=0V
f=1MHz
n=10pcs
40
REVERSE CURRENT:I
R
(nA)
9
8
30
7
20
AVE:11nA
6
AVE:5.03pF
5
10
0
I
R
DISPERSION MAP
4
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.09 - Rev.A
DAP202UM
Data Sheet
20
1cyc
50
I
F
=I
R
=100mA
Irr=0.1*I
R
REVERSE RECOVERY TIME:trr(ns)
40
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
15
8.3ms
30
10
20
AVE:19.3ns
10
5
AVE:2.50A
0
I
FSM
DISPERSION MAP
0
trr DISPERSION MAP
5
100
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
3
8.3ms
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
4
1cyc
I
FSM
t
10
2
1
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
1
0.1
1
10
100
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
1000
Rth(j-a)
10
9
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-c)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
8
7
6
5
4
3
AVE:1.47kV
2
AVE:2.98kV
100
Mounted on epoxy board
IM=100mA
I
F
=10A
1ms
10
0.001
time
1
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
300us
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.09 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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