Data Sheet
Switching Diode
DAP222WM
lApplications
High frequency switching
lDimensions
(Unit : mm)
lLand
size figure
(Unit : mm)
1.0
0.5 0.5
0.7
lFeatures
1)Ultra small mold type. (EMD3F)
2)High reliability
0.7
0.7
0.6
0.6
lConstruction
Silicon epitaxial planer
EMD3
lStructure
ROHM : EMD3F
dot (year week factory)
lTaping
dimensions
(Unit : mm)
lAbsolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
V
R
Reverse voltage (DC)
I
FM
Forward voltage(repetitive peak)
Average rectified forward current
Io
I
surge
Surge current(t=1s)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Limits
80
80
300
100
4
150
150
-55
to
+150
Unit
V
V
mA
mA
A
mW
C
C
lElectrical
characteristics
(Ta=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
μA
pF
ns
I
F
=100mA
V
R
=70V
Conditions
V
R
=6V , f=1MHz
V
R
=6V , I
F
=5mA , R
L
=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.12 - Rev.A
1.3
DAP222WM
Data Sheet
100
100000
Ta=150°C
10
FORWARD CURRENT:I
F
(mA)
10000
Ta=150°C
REVERSE CURRENT:I
R
(nA)
Ta=75°C
1000
Ta=125°C
1
Ta=125°C
0.1
Ta=25°C
Ta=75°C
100
Ta=25°C
10
0.01
1
0.001
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
0.1
0
10
20
30
40
50
60
70
80
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
10
f=1MHz
FORWARD VOLTAGE:V
F
(mV)
910
Ta=25°C
I
F
=100mA
n=30pcs
900
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
890
1
880
AVE:884mV
870
860
0.1
0
5
10
15
20
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
850
V
F
DISPERSION MAP
50
Ta=25°C
V
R
=70V
n=10pcs
10
Ta=25°C
V
R
=0V
f=1MHz
n=10pcs
REVERSE CURRENT:I
R
(nA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
40
9
8
30
7
20
AVE:11nA
6
AVE:5.03pF
5
10
0
I
R
DISPERSION MAP
4
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.12 - Rev.A
DAP222WM
Data Sheet
20
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
15
8.3ms
1cyc
REVERSE RECOVERY TIME:trr(ns)
50
I
F
=I
R
=100mA
I
RR
=0.1I
R
40
30
10
20
5
AVE:2.50A
AVE:19.3ns
10
0
I
FSM
DISPERSION MAP
0
trr DISPERSION MAP
5
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
4
8.3ms
3
8.3ms
1cyc
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
100
I
FSM
t
10
2
1
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
1
0.1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
1
100
1000
Rth(j-a)
10
9
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-c)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
8
7
6
5
4
3
2
AVE:1.47kV
AVE:2.98kV
100
Mounted on epoxy board
IM=100mA
I
F
=10A
1ms
time
1
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
300us
10
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.12 - Rev.A
Notice
Notes
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