LC5540LD Series
Single-Stage Power Factor Corrected
Off-Line Switching Regulators
Features and Benefits
• Integrated on-width control circuit (it realizes high power
factor by average current control)
• Integrated startup circuit (no external startup
circuit necessary)
• Integrated soft-start circuit (reduces power stress during
start-up on the incorporated power MOSFET and rectifier)
• Integrated bias assist circuit (improves the startup
performance, suppresses V
CC
voltage droop during
operation, allows reduction of VCC capacitor value as well
as use of a ceramic capacitor)
• Integrated Leading Edge Blanking (LEB) circuit
• Integrated maximum on-time limit circuit
• Dual-chip structure, with an avalanche-guaranteed power
MOSFET (allows simplified surge suppressing circuits)
• Protection features:
▫
Overcurrent protection (OCP): pulse-by-pulse
▫
Overvoltage protection (OVP): latched shutdown
▫
Overload protection (OLP): latched shutdown
▫
Thermal shutdown (TSD): latched shutdown
Description
LC5540LD series is a quasi-resonant topology switching
power supply IC, designed for input capacitorless applica-
tions, and making it possible for systems to comply with the
harmonics standard (IEC61000-3-2 class C). It incorporates
separate controller and power MOSFET chips. The control-
ler adapts the average current control method for realizing
high power factors, and the quasi-resonant topology contrib-
utes to high efficiency and low EMI noise. The rich set of
protection features helps to realize low component counts,
and high performance-to-cost power supply.
The LC5540LD devices are intended for isolated designs.
The incorporated MOSFET has a V
DSS
(min) rating from
650 V (LC5545LD and LC5546LD) to 800 V (LC5548LD).
The R
DS(on)
(max) is 1.9
Ω
(LC5546LD) to 3.95
Ω
(LC5545LD). It is capable of a maximum output power
of 20 W on 230 VAC supply to 16 W on universal supply
(LC5546LD) based on the thermal rating. Note that the
maximum output power can be up to 120% to 140% of this
value. However, it may be limited in applications with low
output voltage or short duty cycle.
Package: 8-pin DIP
Not to scale
Applications
• LED lighting fixtures
• LED light bulbs
Typical Application
F1
L1
D1
VAC
C1
D3
D4
C2
C9
D9
U1
LC554xLD
8
D/ST
C3
Control
Part
S/GND VCC OCP FB
1
2
3
4
R7
C5
R2
(Rocp)
R3
C6
D7
PC1
C7
OVP
6
D5
S/GND
5
NF
PC2
R6
D6
C17
R1
R9
PC1
R12
C4
DZ2
DZ1
C12
U2
C8
R5
D2
L2
T1
D8
PC2
C10
Q1
R13
R11
C13
R17
-
+
C14
R16
R14
R15
R18
C15
R19 R20
C16
LED
C11
R8 R10
R4
LC5540LD-DS
SANKEN ELECTRIC CO., LTD.
LC5540LD
Series
Single-Stage Power Factor Corrected
Off-Line Switching Regulators
Selection Guide
Part
Number
LC5545LD
LC5546LD
LC5548LD
MOSFET
V
DSS
(min)
(V)
650
800
R
DS(on)
(max)
(Ω)
3.95
1.9
3.5
PWM Operation
Frequency, f
OSC
(typ)
(kHz)
72
60
72
On-Time
t
ON(MAX)
(typ)
(μs)
9.3
11.2
9.3
P
OUT
*
(W)
230 VAC
13
20
13
Universal
10
16
10
*Based on the thermal rating; the allowable maximum output power can be up to 120% to 140% of
this value. However, maximum output power may be limited in such an application with low output
voltage or short duty cycle.
The polarity value for current specifies a sink as "+," and a source as “−,” referencing the IC.
Absolute Maximum Ratings
Unless specifically noted, T
A
is 25°C
Characteristic
Drain Current
1
Symbol
LC5545LD
I
DPeak
LC5546LD
LC5548LD
LC5545LD
Single Pulse Avalanche Energy
2
Input Voltage for Control Part (MIC)
OCP Pin Voltage
FB Pin Voltage
OVP Pin Voltage
Allowable Power Dissipation of
MOSFET
3
Operating Ambient Temperature
Storage Temperature
Channel Temperature
1
Refer
2
Refer
Notes
Single pulse
I
LPeak
= 2.0 A, V
DD
= 99 V, L = 10 mH
I
LPeak
= 2.7 A, V
DD
= 99 V, L = 10 mH
I
LPeak
= 2.3 A, V
DD
= 99 V, L = 10 mH
Pins
8–1
Rating
2.5
4.0
2.6
47
Unit
A
A
A
mJ
mJ
mJ
V
V
V
V
W
°C
°C
°C
E
AS
V
CC
V
OCP
V
FB
V
OVP
P
D1
T
OP
T
stg
T
ch
LC5546LD
LC5548LD
8–1
2–1
3–1
4–1
6–1
86
56
35
−1.0
to 5.0
−0.3
to 7.0
−0.3
to 5.0
0.97
−55
to 125
−55
to 125
150
Mounted on a 15 mm × 15 mm PCB
8–1
―
―
―
to MOSFET Safe Operating Area Curve.
to MOSFET Avalanche Energy Derating Coefficient Curve.
3
Refer to MOSFET Temperature versus Power Dissipation Curve.
LC5540LD-DS
SANKEN ELECTRIC CO., LTD.
2
LC5540LD
Series
Single-Stage Power Factor Corrected
Off-Line Switching Regulators
Electrical Characteristics of Control Part (MIC)
T
A
= 25°C, V
CC
= 20 V, unless otherwise specified
Characteristic
Power Supply Startup Operation
Operation Start Voltage
Operation Stop Voltage*
Circuit Current in Operation
Startup Circuit Operation Voltage
Startup Current
Startup Current Threshold Biasing
Voltage*
Normal Operation
LC5545LD
PWM Operation Frequency
f
OSC
LC5546LD
LC5548LD
LC5545LD
Maximum On-Time
FB Pin Control Minimum Voltage
Maximum Feedback Current
Leading Edge Blanking Time
Quasi-Resonant Operation Threshold
Voltage-1
Quasi-Resonant Operation Threshold
Voltage-2
Protected Operation
OCP Pin Overcurrent Protection
(OCP) Threshold Voltage
OCP Pin Source Current
OCP Pin Overvoltage Protection
(OVP) Operation Voltage
Overload Protection (OLP) Threshold
Voltage
OVP Pin OVP Threshold Voltage
VCC Pin OVP Threshold Voltage
Thermal Shutdown Activating
Temperature
*V
CC(BIAS)
> V
CC(OFF)
always.
V
OCP
I
OCP
V
BD(OVP)
V
FB(OLP)
V
OVP(OVP)
V
CC(OVP)
T
J(TSD)
3–1
3–1
3–1
4–1
6–1
2–1
–
−0.66
−120
2.2
4.1
1.6
28.5
135
−0.60
−40
2.6
4.5
2.0
31.5
–
−0.54
−10
3.0
4.9
2.4
34.0
–
V
μA
V
V
V
V
°C
t
ON(MAX)
V
FB(MIN)
I
FB(MAX)
t
ON(LEB)
V
BD(TH1)
V
BD(TH2)
LC5546LD
LC5548LD
4–1
4–1
3–1
3–1
3–1
8–1
8–1
60
50
60
8.0
9.0
8.0
0.50
–40
−
0.14
0.11
72
60
72
9.3
11.2
9.3
0.85
–25
600
0.24
0.16
84
70
84
11.2
13.4
11.2
1.20
–10
−
0.34
0.21
kHz
kHz
kHz
μs
μs
μs
V
μA
ns
V
V
V
CC(ON)
V
CC(OFF)
I
CC(ON)
V
STARTUP
I
CC(STARTUP)
V
CC(BIAS)
V
CC
= 13 V
2–1
2–1
2–1
8–1
2–1
2–1
13.8
8.4
–
18
−8.5
9.5
15.1
9.4
–
21
−4.0
11.0
17.3
10.7
4.7
24
−1.5
12.5
V
V
mA
V
mA
V
Symbol
Test Conditions
Pins
Min.
Typ.
Max.
Unit
LC5540LD-DS
SANKEN ELECTRIC CO., LTD.
3
LC5540LD
Series
Single-Stage Power Factor Corrected
Off-Line Switching Regulators
ELECTRICAL CHARACTERISTICS (MOSFET)
T
A
= 25°C, unless otherwise specified
Characteristic
Drain-to-Source Breakdown Voltage
Drain Leakage Current
On-Resistance
Symbol
LC5545LD
V
DSS
I
DSS
LC5545LD
R
DS(ON)
LC5546LD
LC5548LD
LC5545LD
Switching Time
t
r
LC5546LD
LC5548LD
LC5545LD
Thermal Resistance
R
θch-c
LC5546LD
LC5548LD
Between channel and case; case
temperature, T
C
, measured at the
center of the marking side
―
8–1
8–1
LC5546LD
LC5548LD
8–1
8–1
Test Conditions
Pins
Min.
650
650
800
―
―
―
―
―
―
―
―
―
―
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
Max.
―
―
―
300
3.95
1.9
3.5
250
400
400
42
35.5
40
Unit
V
V
V
μA
Ω
Ω
Ω
ns
ns
ns
°C/W
°C/W
°C/W
LC5540LD-DS
SANKEN ELECTRIC CO., LTD.
4
LC5540LD
Series
Single-Stage Power Factor Corrected
Off-Line Switching Regulators
Characteristic Performance
LC5545LD
100
MOSFET Safe Operating Area Curve
S. O. A. Temperature Derating Coefficient Curve
Safe Operating Area
Temperature Derating Coefficient (%)
100
10
Drain Current, I
D
(A)
80
Drain current limited
by on-resistance
0.1 ms
60
1
40
1 ms
20
0.1
0
0
25
50
75
100
125
150
Channel Temperature, Tch (°C)
0.01
1
To use this graph, apply the S.O.A
temperature derating coefficient
taken from the graph at the left
10
100
1000
Drain-to-Source Voltage, VDS (V)
MOSFET Avalanche Energy Derating Coefficient Curve
EAS
Temperature Derating Coefficient (%)
100
MOSFET Temperature versus Power Dissipation Curve
Allowable Power Dissipation, P
D1
(W)
1.2
1.0
0.8
0.6
0.4
0.2
0
80
60
40
20
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Channel Temperature, Tch (°C)
10
Ambient Temperature, TA (°C)
Transient Thermal Resistance Curve
Transient Thermal Resistance, R
θch-c
(°C/W)
1
0.1
0.01
10
–6
10
–5
10
–4
10
–3
10
–2
10
–1
Time (s)
LC5540LD-DS
SANKEN ELECTRIC CO., LTD.
5
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