VSMY7852X01
Vishay Semiconductors
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
FFEATURES
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Package type: surface mount
Package form: Little Star
®
Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
Peak wavelength:
p
= 850 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 60°
Low forward voltage
Designed for high drive currents: up to 250 mA DC and up
to 1.5 A pulses
Low thermal resistance: R
thJP
= 15 K/W
Floor life: 4 weeks, MSL 2a, acc. J-STD-020
Lead (Pb)-free reflow soldering
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20783
DESCRIPTION
VSMY7852X01 is an infrared, 850 nm emitting diode based
on surface emitter technology with high radiant power and
high speed, molded in low thermal resistance Little Star
package. A 20 mil chip provides outstanding low forward
voltage and allows DC operation of the device up to 250 mA.
AAPPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Driver assistance systems
• Machine vision IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMY7852X01
I
e
(mW/sr)
42
(deg)
± 60
p
(nm)
850
t
r
(ns)
15
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMY7852X01-GS08
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 2000 pcs, 2000 pcs/reel
PACKAGE FORM
Little Star
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/pin
Document Number: 81146
Rev. 1.0, 29-Apr-11
Acc. figure 7, J-STD-20
Acc. J-STD-051, soldered on PCB
t
p
/T = 0.5, t
p
½
100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJP
VALUE
5
250
500
1.5
500
125
- 40 to + 100
- 40 to + 100
260
15
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
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1
For technical questions, contact:
emittertechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
600
300
250
200
150
100
P
V
- Power Dissipation (mW)
400
300
200
R
thJP
= 15 K/W
100
0
0
20
40
60
80
100
120
I
F
- Forward Current (mA)
500
R
thJP
= 15 K/W
50
0
0
20
40
60
80
100
120
21779
T
amb
- Ambient Temperature (°C)
21780
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Radiant intensity
Radiant power
Temperature coefficient of
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
TEST CONDITION
I
F
= 250 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
I
F
= 250 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
I
F
= 250 mA, t
p
= 20 ms
I
F
= 1 A
SYMBOL
V
F
V
F
TK
VF
I
R
I
e
I
e
e
TK
e
p
TK
p
t
r
t
f
MIN.
TYP.
1.8
2.8
- 1.5
not designed for reverse operation
30
42
220
130
- 0.5
± 60
850
30
0.2
8
10
90
MAX.
2.0
UNIT
V
V
mV/K
μA
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
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2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81146
Rev. 1.0, 29-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
High Power Infrared Emitting Diode,
Vishay Semiconductors
850 nm, Surface Emitter Technology
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
0°
10°
20°
30°
I
e, rel
- Relative Radiant Intensity
t
p
= 100 µs
I
F
- Forward Current (A)
1
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.1
0.01
0.001
0
21781
0.5
1
1.5
2
2.5
3
94 8013
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
1000
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 µs
100
10
1
0.1
0.001
21782
0.01
0.1
1
10
I
F
- Forward Current (A)
Fig. 4 - Radiant Intensity vs. Forward Current
1
Φ
e, rel
- Relative Radiant Power
0.75
0.5
0.25
0
650
21776
750
850
950
λ-
Wavelength (nm)
Fig. 5 - Relative Radiant Power vs. Wavelength
Document Number: 81146
Rev. 1.0, 29-Apr-11
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMY7852X01
Vishay Semiconductors
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
TAPING DIMENSIONS
in millimeters
20846
www.vishay.com
4
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81146
Rev. 1.0, 29-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY7852X01
High Power Infrared Emitting Diode,
Vishay Semiconductors
850 nm, Surface Emitter Technology
PACKAGE DIMENISONS
in millimeters
20848
Document Number: 81146
Rev. 1.0, 29-Apr-11
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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