VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.40 V at I
F
= 5 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
2
VT3060G
PIN 1
PIN 3
PIN 2
CASE
3
1
VFT3060G
PIN 1
PIN 3
PIN 2
2
3
• Not recommended for PCB bottom side wave mounting
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
TO-263AB
K
K
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
1
VBT3060G
PIN 1
PIN 2
K
HEATSINK
2
3
MECHANICAL DATA
Case:
TO-220AB,
TO-262AA
ITO-220AB,
TO-263AB
and
VIT3060G
PIN 1
PIN 3
PIN 2
K
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs max.
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
J
max.
Package
Circuit configuration
2 x 15 A
60 V
150 A
0.61 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Common cathode
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. average forward rectified current
(fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
V
AC
T
J
, T
STG
VT3060G
VFT3060G
VBT3060G
60
30
15
150
120
1.0
1500
-55 to +150
VIT3060G
UNIT
V
A
A
mJ
A
V
°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 16-Mar-18
Document Number: 89135
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 5 A
I
F
= 7.5 A
Instantaneous forward voltage per diode
(1)
I
F
= 15 A
I
F
= 5 A
I
F
= 7.5 A
I
F
= 15 A
Reverse current per diode
(2)
V
R
= 60 V
T
A
= 25 °C
T
A
= 125 °C
I
R
T
A
= 125 °C
T
A
= 25 °C
V
F
T
A
= 25 °C
SYMBOL
V
BR
TYP.
60 (min.)
0.49
0.53
0.65
0.40
0.46
0.61
-
14
MAX.
-
-
-
0.73
-
-
0.69
850
40
μA
mA
V
UNIT
V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
per diode
per device
SYMBOL
R
JC
VT3060G
3.2
1.9
VFT3060G
6.2
5.0
VBT3060G
3.2
1.9
VIT3060G
3.2
1.9
UNIT
°C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT3060G-E3/4W
VFT3060G-E3/4W
VBT3060G-E3/4W
VBT3060G-E3/8W
VIT3060G-E3/4W
UNIT WEIGHT (g)
1.88
1.76
1.39
1.39
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 16-Mar-18
Document Number: 89135
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
36
100
V(B,I)T3060G
Average Forward Rectified Current (A)
32
28
24
20
16
12
8
4
0
0
25
50
75
Mounted on Specific Heatsink
VFT3060G
Instantaneous Reverse Current (mA)
10
T
A
= 150 °C
T
A
= 125 °C
1
T
A
= 100 °C
0.1
0.01
T
A
= 25 °C
0.001
100
125
150
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
14
D = 0.5
D = 0.8
10
Transient Thermal Impedance (°C/W)
Junction to Case
VFT3060G
Average Power Disspation (W)
12
10
8
D = 0.1
6
D = 0.2
D = 0.3
D = 1.0
V(B,I)T3060G
T
4
2
0
0
2
4
6
8
10
12
14
16
18
D = t
p
/T
t
p
1
0.01
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Fig. 5 - Typical Transient Thermal Impedance Per Diode
100
10 000
T
A
= 150 °C
Instantaneous Forward Current (A)
10
T
A
= 125 °C
T
A
= 100 °C
Junction Capacitance (pF)
1000
1
T
A
= 25 °C
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 16-Mar-18
Document Number: 89135
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 16-Mar-18
Document Number: 89135
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Revision: 16-Mar-18
Document Number: 89135
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Embedded System
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