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60CPU02-F_12

Description
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AC
Categorysemiconductor    Discrete semiconductor   
File Size164KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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60CPU02-F_12 Overview

30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AC

VS-60CPU02-F, VS-60CPU02-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier,
FRED Pt
®
, 2 x 30 A
FEATURES
• Ultrafast recovery time
Base 2
common
cathode
Anode 1
TO-247AC
Anode 2
2
1 Common 3
cathode
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
DESCRIPTION
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC
2 x 30 A
200 V
1.1 V
30 ns
175 °C
Common cathode
VS-60CPU02... series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
per leg
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, T
C
= 145 °C
T
J
= 25 °C
Rated V
R
, square wave, 20 kHz, T
C
= 137 °C
TEST CONDITIONS
VALUES
200
30
60
300
60
- 65 to 175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
TYP.
-
0.92
0.75
-
30
100
12
MAX.
-
1.1
0.85
50
300
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 26-Jan-12
Document Number: 94657
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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