DTC144TE / DTC144TUA
DTC144TCA / DTC144TSA / DTC144TM
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTC144TE (SOT-523)
DTC144TUA (SOT-323)
Addreviated symbol：06
DTC144TM (SOT-723)
Addreviated symbol：06
DTC144TCA (SOT-23)
EQUIVALENT CIRCUIT
Addreviated symbol：06
DTA143TSA (TO-92S)
Addreviated symbol：06
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction & Storage temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
J
, T
STG
Limits (DTC144T□)
M
E
UA
50
50
5
100
100
150
200
150, -55~150
300
CA
SA
Unit
V
V
mA
mW
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Nov-2011 Rev. A
Page 1 of 2
DTC144TE / DTC144TUA
DTC144TCA / DTC144TSA / DTC144TM
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Min.
50
50
5
-
-
-
100
32.9
250
Typ.
-
-
-
-
-
-
300
47
-
Max.
-
-
-
0.5
0.5
0.3
600
61.1
-
Unit
V
V
V
µA
µA
V
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=5mA, I
B
=0.5mA
V
CE
=5V, I
C
=1mA
K
MHz
V
O
=10V, I
E
= -5mA,
f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Nov-2011 Rev. A
Page 2 of 2
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