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KBU802G

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size893KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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KBU802G Overview

BRIDGE RECTIFIER DIODE

KBU8005G ~ KBU810G
Elektronische Bauelemente
Voltage 50V ~ 1000V
8.0Amp Glass Passivited Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
KBU
FEATURES
Surge overload rating -175 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
The plastic material has Underwriters Laboratory
Mounting postition:Any
Mounting torgue:5 In.Ib.Max
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
22.7
23.7
18.8
19.8
6.5
7.0
16.8
17.8
4.0 x 45°
3.8 Ø x5.7L
REF.
G
H
I
J
K
Millimeter
Min.
Max.
7.5 REF
25.4
-
1.2 Ø TYP.
4.6
5.6
1.8
2.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @T
C
=100°C
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Super Imposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage @ 4A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
J
=25℃
T
J
=100℃
1
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
KBU
8005G
KBU
801G
KBU
802G
KBU
804G
KBU
806G
KBU
808G
KBU
810G
Unit
V
V
V
A
50
35
50
100
70
100
200
140
200
400
280
400
8
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
C
J
T
J
,T
STG
175
1.1
10
A
V
µA
100
250
-55~150
pF
°C
Typical Junction Capacitance Per Element
Operating and Storage temperature range
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2011 Rev. A
Page 1 of 2

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