SMG2305P
Elektronische Bauelemente
-4.5A , -20V , R
DS(ON)
43 mΩ
Ω
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
A
L
3
SC-59
3
Top View
C B
1
2
2
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
1
K
E
D
F
G
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
J
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
1
2
1
Symbol
V
DS
V
GS
T
A
=25°
C
I
D
T
A
=70°
C
I
DM
T
A
=25°
C
P
D
T
A
=70°
C
Rating
-20
±8
-4.5
Unit
V
V
A
-3.6
-10
1.25
W
0.8
T
J
, T
STG
-55~150
°
C
A
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t
≦
5 sec
Steady-State
R
θJA
100
150
° /W
C
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8-Aug-2011 Rev. A
Page 1 of 2
SMG2305P
Elektronische Bauelemente
-4.5A , -20V , R
DS(ON)
43 mΩ
Ω
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Typ
Max
Unit
Test Condition
V
GS(th)
I
GSS
I
DSS
-0.7
-
-
-
-
-
-
-
-
-
-
-
12
-0.6
2
-
±100
-1
V
nA
µA
V
DS
=V
GS
, I
D
= -250µA
V
DS
=0, V
GS
= ±8V
V
DS
= -16V, V
GS
=0
V
DS
= -16V, V
GS
=0, T
J
=55°
C
-10
-
43
54
120
-
-
S
V
m
A
I
D(ON)
-10
-
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -3.1A
V
GS
= -1.8V, I
D
= -2.7A
V
DS
= -5V,
,
I
D
= -1.25A
I
S
= -0.46A, V
GS
=0
Drain-Source On-Resistance
1
R
DS(ON)
-
-
Forward Transconductance
Diode Forward Voltage
1
g
FS
V
SD
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
12
2
2
6.5
20
31
21
-
-
-
-
-
nS
-
-
nC
I
D
= -2.4A
V
DS
= -5V
V
GS
= -4.5V
I
L
= -1A,
V
DD
= -10V,
V
GEN
= -4.5V,
R
G
=6
Notes:
1.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8-Aug-2011 Rev. A
Page 2 of 2
Power technology
京公网安备 11010802033920号
EEWORLD
