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TB6S

Description
Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers
CategoryDiscrete semiconductor    diode   
File Size261KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

TB6S Overview

Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers

TB6S Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompliant
Diode typeBRIDGE RECTIFIER DIODE
TB2S ~ TB10S
Elektronische Bauelemente
Voltage 200V ~ 1000V
1.0 Amp Silicon Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Glass passivated chip junction
High surge overload rating:30A peak
Save space on printed circuit boards
High temperature soldering guaranteed:
260°C / 10 seconds at 5 lbs. (2.3 kg) tension
TBS
-
A
+
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Dimensions in inches and (millimeters)
Mounting position: Any
B
F
C
D
E
H
I
REF.
F
G
H
I
Millimeter
Min.
6.30
0.05
4.25
0.50
Max.
6.70
0.15
4.55
0.70
G
PACKAGE INFORMATION
Package
TBS
MPQ
4K
Leader Size
13 inch
REF.
A
B
C
D
E
Millimeter
Min.
4.25
4.85
1.15
0.60
3.90
Max.
4.55
5.15
1.45
0.70
4.10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
.)
Parameter
Maximum Recurrent Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Instantaneous Forward Voltage @
I
FM
=0.4A
Maximum Average Forward Rectified Current
@ T
L
=100°C
Peak Forward Surge Current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
On aluminum
Typical thermal resistance substrate
junction to ambient
On glass-epoxy
substrate
Typical thermal resistance junction to lead
Maximum DC Reverse Current at Rated DC
Blocking Voltage@ T
A
=25°C
Operating & Storage Temperature Range
Notes:
1.
On glass epoxy P.C.B.
2.
On aluminum substrate.
http://www.SeCoSGmbH.com/
Symbol
V
RRM
V
RMS
V
DC
V
F
I
F(AV)
Part Number
TB2S
200
140
200
TB4S
400
280
400
TB6S
600
420
600
0.95
0.8
1
1.0
2
30
62.5
TB8S
800
560
800
TB10S
1000
700
1000
Unit
V
V
V
V
A
I
FSM
A
R
θJA
80
R
θJL
I
R
T
J
,T
STG
25
10
-55~150
°C / W
 
A
°C
Any changes of specification will not be informed individually.
14-Feb-2012 Rev. B
Page 1 of 2

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Description Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers
Maker SECOS SECOS SECOS SECOS SECOS
Reach Compliance Code compliant compli compliant compli compli
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