ZMM 1...ZMM200
SILICON PLANAR ZENER DIODES
in MiniMELF case especially for automatic insertion. The
Zener voltages are graded according to the international E 24
standard. Smaller voltage tolerances and higher Zener
voltages are upon request.
LL-34
These diodes are also available in DO-35 case with the type
designation BZX55C...
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Value
500
1)
Unit
mW
O
P
tot
T
j
T
S
175
-55 to +175
C
C
O
Valid provided that electrodes are kept at ambient temperature
Characteristics at T
amb
= 25
o
C
Symbol
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at I
F
= 100mA
1)
Min.
-
-
Typ.
-
-
Max.
0.3
1)
1
Unit
K/mW
V
R
thA
V
F
Valid provided that electrodes are kept at ambient temperature
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
ZMM 1...ZMM200
Zener Voltage Range
1)
Type
3)
Dynamic Resistance
r
ZJT
Ω
<8
<85
<85
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
<300
<450
<450
<600
<800
<950
<1250
<1400
<1700
<2000
Reverse Leakage Current
T
a
=25
o
C
μA
--
<100
<75
<50
<10
<4
<2
<2
<2
<1
<0.5
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
Vznom
V
0.75
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
l
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
for
V
ZT 2)
V
0.7...0.8
1.80...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4.0...4.6
4.4...5.0
4.8...5.4
5.2...6.0
5.8...6.6
6.4...7.2
7.0...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
77...87
85...96
94...106
104...116
114...127
124...141
138...156
153...171
168...191
188...212
r
ZJK
at I
ZK
Ω
mA
<50
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<550
<450
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<220
<220
<220
<220
<500
<500
<600
<700
<700
<1000
<1000
<1000
<1500
<2000
<5000
<5000
<5500
<6000
<6500
<7000
<8500
<10000
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
a
= 125
o
C
μA
--
<200
<160
<100
<50
<40
<40
<40
<40
<20
<10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
I
R
at V
R
V
--
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
Temp coefficient
of Zener Voltage
TKvz
%/K
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
ZMM 1
ZMM 2V0
ZMM 2V2
ZMM 2V4
ZMM 2V7
ZMM 3V0
ZMM 3V3
ZMM 3V6
ZMM 3V9
ZMM 4V3
ZMM 4V7
ZMM 5V1
ZMM 5V6
ZMM 6V2
ZMM 6V8
ZMM 7V5
ZMM 8V2
ZMM 9V1
ZMM 10
ZMM 11
ZMM 12
ZMM 13
ZMM 15
ZMM 16
ZMM 18
ZMM 20
ZMM 22
ZMM 24
ZMM 27
ZMM 30
ZMM 33
ZMM 36
ZMM 39
ZMM 43
ZMM 47
ZMM 51
ZMM 56
ZMM 62
ZMM 68
ZMM 75
ZMM 82
ZMM 91
ZMM 100
ZMM 110
ZMM 120
ZMM 130
ZMM 150
ZMM 160
ZMM 180
ZMM 200
1) Tested with pulses t
p
= 20 ms.
2) Valid provided that electrodes are kept at ambient temperature
3) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”. Connect
the cathode electrode to the negative pole.
２
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
ZMM 1...ZMM200
Breakdown characteristics
T
j
= constant (pulsed)
mA
50
ZMM...
Tj=25 C
ZMM 1
o
ZMM 2.7
ZMM 3.9
ZMM 3.3
ZMM 4.7
ZMM 6.8
Iz
40
ZMM 8.2
ZMM 5.6
30
20
10
Test current Iz
5mA
0
0
1
2
3
4
5
6
Vz
7
8
9
10 V
Breakdown characteristics
T
j
= constant (pulsed)
mA
30
ZMM...
ZMM 10
ZMM 12
Tj=25
o
C
Iz
ZMM 15
20
ZMM 18
ZMM 22
ZMM 27
ZMM 33
ZMM 36
10
Test current Iz
5mA
0
0
10
20
Vz
30
40 V
３
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
ZMM 1...ZMM200
Breakdown characteristics
T
j
= constant (pulsed)
mA
10
ZMM 51
ZMM...
Tj=25
o
C
ZMM 39
Iz
8
ZMM 43
Test current Iz
5mA
6
ZMM 47
4
2
0
0
10
20
30
40
50
60
Vz
70
80
90
100 V
Forward characteristics
Admissible power dissipation
versus ambient temperature
Valid provided that electrodes are kept
at ambient temperature.
mA
10
3
ZMM...
mW
500
ZMM...
10
2
i
F
10
Tj=100 C
1
Tj=25 C
10
-1
o
o
P
tot
400
300
10
-2
200
10
-3
100
10
-4
10
-5
0
0
0.2
0.4
0.6
V
F
0.8
1V
0
100
200
o
C
T
amb
４
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
ZMM 1...ZMM200
Pulse thermal resistance
versus pulse duration
Valid provided that the electrodes are kept
at ambient temperature.
K/W
10
3
7
5
5
4
3
2
2
2
4
Dynamic resistance
versus Zener current
ZMM...
ZMM...
1000
T
j
=25 C
o
r
thA
r
zj
3
0.5
100
0.2
5
4
10
7
5
4
3
0.1
0.05
3
2
2
0.02
0.01
V=0
10
7
5
4
3
2
10
ZMM1
5
4
2.7
3.6
4.7
t
p
t
p
V=
T
P
I
3
2
5.1
ZMM5.6
0.1
2
5
T
1
10
-5
10
-4
1
1
10 S
1
2
5
10
-3
10
-2
10
t
p
-1
10
2
5
100mA
Iz
Capacitance versus
Zener voltage
Dynamic resistance
versus Zener current
ZMM...
pF
1000
7
5
ZMM...
T
j
=25 C
o
100
T
j
=25 C
5
o
r
zj
V
R
=1V
4
3
C
tot
4
3
33
2
V
R
=2V
2
27
22
18
15
12
10
100
7
5
4
3
V
R
=1V
5
4
3
V
R
=2V
10
2
6.8/8.2
2
ZMM6.2
1
0.1
1
2
3
4 5
2
5
10
10
2
3
4 5
1
2
5
10
2
5
100mA
100V
Iz
Vz at Iz=5 mA
５
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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