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25CTQ045-N3

Description
30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size168KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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25CTQ045-N3 Overview

30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB

VS-25CTQ...PbF Series, VS-25CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
Anode
TO-220AB
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 15 A
25 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
Common cathode
20 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-25CTQ... center tap Schottky rectifier series has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
15 A
pk
, T
J
= 125 °C (per leg)
Range
VALUES
30
35 to 45
990
0.50
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
SYMBOL
V
R
35
V
RWM
35
40
40
45
45
V
VS-
VS-
VS-
VS-
VS-
VS-
UNITS
25CTQ035PbF 25CTQ035-N3 25CTQ040PbF 25CTQ040-N3 25CTQ045PbF 25CTQ045-N3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 26-Aug-11
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 102 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
990
A
250
20
3
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 3.0 A, L = 4.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94173
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB

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