TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Ttransistors
2SD1691 / 2SB1151
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Total Dissipation at
Max. Operating Junction Temperature
O
l
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
tot
T
j
T
stg
Value
60
60
7.0
5.0
8.0
20
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
TO-126
Storage Temperature
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cutoff Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
Symbol
Test Conditions
V
CB
=50V, I
E
=0
V
EB
=7.0V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=1.0V, I
C
=0.1A
V
CE
=1.0V, I
C
=2.0A
V
CE
=1.0V, I
C
=5.0A
Min.
—
—
60
60
100
50
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
10
10
—
—
400
—
0.3
1.2
2.5
V
V
us
Unit
uA
uA
V
O
I
CBO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
h
FE(3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Storage Time
V
CE(sat)
I
C
=2.0A,I
B
=0.2A
V
BE(sat)
I
C
=2.0A,I
B
=0.2A
t
stg
I
C
=2.0A, I
B1
=-I
B2
=0.2A
hfe(2): M 100~200, L 160~320, K 200~400
EAST SEMICONDUCTOR CO., LTD
Phone: 86-510-83880883
Fax: 86-510-83883883
京公网安备 11010802033920号
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