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30CPQ060-N3

Description
30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AC
Categorysemiconductor    Discrete semiconductor   
File Size162KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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30CPQ060-N3 Overview

30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AC

VS-30CPQ0.0PbF, VS-30CPQ0.0-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
FEATURES
• 150 °C T
J
operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
2 x 15 A
50 V, 60 V
0.56 V
45 mA at 125 °C
150 °C
Common cathode
13 mJ
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 Apk, T
J
= 125 °C (per leg)
CHARACTERISTICS
Rectangular waveform
VALUES
30
50/60
1020
0.56
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
V
RWM
50
50
60
60
V
VS-30CPQ050PbF
VS-30CPQ050-N3
VS-30CPQ060PbF
VS-30CPQ060-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 112 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
1020
265
13
1.50
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1.50 A, L = 11.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 01-Sep-11
Document Number: 94183
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

30CPQ060-N3 Related Products

30CPQ060-N3 30CPQ0.0PBF 30CPQ050-N3
Description 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AC 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AC 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AC

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