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30CPQ080-N3

Description
30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC
Categorysemiconductor    Discrete semiconductor   
File Size167KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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30CPQ080-N3 Overview

30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC

VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
2 x 15 A
80 V, 90 V, 100 V
0.67 V
7 mA at 125 °C
175 °C
Common cathode
7.5 mJ
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 Apk, T
J
= 125 °C (per leg)
CHARACTERISTICS
Rectangular waveform
VALUES
30
80/100
920
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse voltage
SYMBOL
V
R
80
V
RWM
80
90
90
100
100
V
VS-
30CPQ080PbF
VS-
30CPQ080-N3
VS-
30CPQ090PbF
VS-
30CPQ090-N3
VS-
30CPQ100PbF
VS-
30CPQ100-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 02-Dec-11
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 140 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
920
240
7.50
0.50
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94184
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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