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65PQ015PBF_12

Description
65 A, 15 V, SILICON, RECTIFIER DIODE, TO-247AC
Categorysemiconductor    Discrete semiconductor   
File Size583KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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65PQ015PBF_12 Overview

65 A, 15 V, SILICON, RECTIFIER DIODE, TO-247AC

VS-65PQ015PbF, VS-65PQ015-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 65 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
Base cathode
2
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
TO-247AC
1
Anode
3
Anode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
65 V
15 V
0.46 V
870 mA at 100 °C
125 °C
Single die
9 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-65PQ015... Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
65 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
65
15
1500
0.46
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 100 °C
T
J
= 125 °C
VS-65PQ015PbF
15
5
VS-65PQ015-N3
15
5
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 83 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 4.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
65
1500
400
9
2
mJ
A
A
UNITS
Revision: 11-Oct-11
Document Number: 94246
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 65 A, 15 V, SILICON, RECTIFIER DIODE, TO-247AC 65 A, 15 V, SILICON, RECTIFIER DIODE, TO-247AC
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