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VS-MBR360-M3

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size118KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VS-MBR360-M3 Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

VS-MBR360-M3 Parametric

Parameter NameAttribute value
MakerVishay
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.06 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current460 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage60 V
Maximum reverse current600 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
Cathode
Anode
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3A
50 V, 60 V
0.64 V
15 mA at 125 °C
150 °C
Single die
5.0 mJ
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-MBR350..., VS-MBR350 axial leaded Schottky
rectifier has been optimized for very low forward voltage
drop, with moderate leakage. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
50/60
460
0.73
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
V
RWM
50
50
60
60
V
VS-MBR350
VS-MBR350-M3
VS-MBR360
VS-MBR360-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 50 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.0
460
80
5.0
1.0
mJ
A
A
UNITS
Revision: 13-Oct-11
Document Number: 93450
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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