BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s at
terminals
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
UNIT
V
mA
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
3.6 to 200
5 to 100
Pulse current
Single
• Halogen-free according to IEC 61249-2-21 definition
ORDERING INFORMATION
DEVICE NAME
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M
ORDERING CODE
BZD27C3V6P-M to
BZD27C200P-M-series-08
BZD27C3V6P-M to
BZD27C200P-M-series-18
TAPED UNITS PER REEL
3000 per 7" reel (8mm tape)
10 000 per 13" reel (8 mm tape)
MINIMUM ORDER QUANTITY
15 000/box
10 000/box
PACKAGE
PACKAGE NAME
DO-219AB (SMF)
WEIGHT
15 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
TEST CONDITION
T
L
= 80 °C
T
A
= 25 °C
(1)
100 μs square pulse
Non repetitive peak surge power
dissipation
(2)
10/1000 μs waveform
(BZD27-C7V5P-M to BZD27-C100P-M)
10/1000 μs waveform
(BZD27-C110P-M to BZD27-C200P-M)
Mounted on epoxy-glass PCB with 3 mm x
3 mm Cu pads ( 40 μm thick)
SYMBOL
P
tot
P
tot
P
ZSM
P
RSM
P
RSM
R
thJL
R
thJA
T
j
T
stg
VALUE
2300
800
300
150
100
30
180
150
- 55 to + 150
UNIT
mW
mW
W
W
W
K/W
K/W
°C
°C
Junction to lead
Junction to ambient air
Junction temperature
Storage temperature range
Notes
(1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2)
T = 25 °C prior to surge
J
Rev. 1.2, 29-Nov-11
Document Number: 83307
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
ZENER VOLTAGE
RANGE
(1)
TEST
CURRENT
I
ZT1
mA
MAX.
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
REVERSE
CURRENT
I
R
at V
R
μA
MAX.
100
50
25
10
5
10
5
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
V
TYP.
4
4
4
3
3
2
2
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
MAX.
8
8
7
7
6
4
3
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
MIN.
- 0.14
- 0.14
- 0.12
- 0.1
- 0.08
- 0.04
- 0.01
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
%/°C
MAX.
- 0.04
- 0.04
- 0.02
0
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
MARKING
CODE
MIN.
BZD27C3V6P-M
BZD27C3V9P-M
BZD27C4V3P-M
BZD27C4V7P-M
BZD27C5V1P-M
BZD27C5V6P-M
BZD27C6V2P-M
BZD27C6V8P-M
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
N0
N1
N2
N3
N4
N5
N6
N7
N8
N9
O0
O1
O2
O3
O4
O5
O6
O7
O8
O9
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
R0
R1
R2
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
PART NUMBER
V
Z
at I
ZT1
V
NOM.
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Notes
• Electrical characteristics when used as regulator diodes
• Maximum V
F
= 1.2 V, at I
F
= 0.2 A
(1)
Pulse test: t
5 ms
p
Rev. 1.2, 29-Nov-11
Document Number: 83307
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
mA
MAX.
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
REVERSE
CURRENT
I
R
at V
R
μA
MAX.
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
V
CLAMPING
VOLTAGE
V
C
at I
RSM (1)
V
MAX.
11.3
12.3
13.3
14.8
15.7
17
18.9
20.9
22.9
25.6
28.4
31
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
139
152
169
187
205
229
254
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
0.72
0.65
0.59
0.53
0.48
0.43
0.39
A
MIN.
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
%/C
MAX.
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
MARKING
CODE
MIN.
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
N8
N9
O0
O1
O2
O3
O4
O5
O6
O7
O8
O9
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
R0
R1
R2
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
V
Z
at I
ZT1
V
NOM.
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Notes
• Electrical characteristics when used as protection diodes
(1)
Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 5.
Rev. 1.2, 29-Nov-11
Document Number: 83307
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
160
140
120
100
80
60
40
20
0
0
50
100
150
200
Vishay Semiconductors
Max.
V
F
Typ.
V
F
1
0.1
0.6
17411
0.8
1.0
1.2
1.4
1.6
17414
P
RSM
- Max. Pulse Power Dissipation (W)
I
F
- Forward Current (A)
V
F
- Forward
Voltage
(V)
V
Znom
- Zener
Voltage
(V)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 4 -
Maximum Pulse Power Dissipation vs. Zener Voltage
10 000
C
D
- Typ. Junction Capacitance (pF)
C5V1P
1000
C6V8P
C12P
C18P
I
RSM
(%)
100
90
t
1
= 10 µs
t
2
= 1000 µs
50
100
C27P
C200P
10
0
0.5
1.0
1.5
2.0
2.5
3.0
17415
C51P
10
t
1
t
2
t
17412
V
R
- Reverse
Voltage
(V)
Fig. 2 -
Typ. Diode Capacitance vs. Reverse Voltage
Fig. 5 -
Non-Repetitive Peak Reverse Current Pulse Definition
3.0
P
tot
- Power Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0
17413
Tie point temperature
Ambient temperature
0
25
50
75
100
125
150
T
amb
- Ambient Temperature (°C)
Fig. 3 -
Power Dissipation vs. Ambient Temperature
Rev. 1.2, 29-Nov-11
Document Number: 83307
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
DO219-AB (SMF)
Vishay Semiconductors
0.85 (0.033)
0.35 (0.014)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Rev. 1.2, 29-Nov-11
Document Number: 83307
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5
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