2N5086 / MMBT5086 / 2N5087 / MMBT5087
2N5086
2N5087
MMBT5086
MMBT5087
C
E
C
B
TO-92
E
SOT-23
Mark: 2P / 2Q
B
PNP General Purpose Amplifier
This device is designed for low level, high gain, low noise general
purpose amplifier applications at collector currents to 50 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
50
50
5.0
100
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
TA= 25°C unless otherwise noted
Characteristic
2N5086
2N5087
625
5.0
83.3
200
Max
*MMBT5086
*MMBT5087
350
2.8
357
Units
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5086/2N5087/MMBT5086/MMBT5087, Rev A
2N5086 / MMBT5086 / 2N5087 / MMBT5087
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA= 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
V
CB
= 10 V, I
E
= 0
V
CB
= 35 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
50
50
10
50
50
V
V
nA
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 1.0 mA, V
CE
= 5.0 V
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
0.3
0.85
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
NF
Current Gain - Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= 500
µA,V
CE
= 5.0 V,f= 20 MHz
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
I
C
= 1.0 mA, V
CE
= 5.0,
f = 1.0 kHz
I
C
= 100
µA,
V
CE
= 5.0 V,
R
S
= 3.0 kΩ, f = 1.0 kHz
I
C
= 20
µA,
V
CE
= 5.0 V,
R
S
= 10 kΩ,
f = 10 Hz to 15.7 kHz
5086
5087
5086
5087
5086
5087
40
4.0
150
250
600
900
3.0
2.0
3.0
2.0
MHz
pF
dB
dB
dB
dB
3
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2 Isc=0
Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p Itf=.17 Vtf=5
Xtf=8 Rb=10)
2N5086 / MMBT5086 / 2N5087 / MMBT5087
PNP General Purpose Amplifier
(continued)
Typical Characteristics
350
V
CB
= 5V
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
300
250
200
150
100
- 40 °C
25 °C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
25
°
C
β
= 10
0.1
0.05
0
0.1
125
°
C
- 40
°
C
50
0.01 0.03
0.1
0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
V
BESAT
- BASE EMITTE R VOLTAGE (V)
1
0.8
- 40 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
25 °C
125 °C
0.6
0.4
0.2
0
0.1
25 °C
125 °C
0.6
0.4
0.2
0
0.1
V
CE
= 5V
β
= 10
1
10
I
C
- COLLECTOR CURRENT (mA)
50
1
10
I
C
- COLLECTOR CURRE NT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 40V
Input and Output Capacitance
vs Reverse Bias Voltage
20
f = 1 MHz
CAPACITANCE (pF)
16
12
8
C ibo
10
1
0.1
4
0
C obo
0.01
25
50
75
100
T
A
- AMBIENT TEMP ERATURE (
°
C)
125
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
2N5086 / MMBT5086 / 2N5087 / MMBT5087
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
350
300
250
200
150
100
50
0
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
CE
= 5V
NF - NOISE FIGURE (dB)
Noise Figure vs Frequency
5
V
CE
= 5V
4
3
I
C
= - 250
µA,
R
S
= 5.0 kΩ
2
I
C
= - 500
µA,
R
S
= 1.0 kΩ
1
I
C
= - 20
µA,
R
S
= 10 kΩ
1000
10000
f - FREQUENCY (Hz)
1000000
f
0
100
T
Wideband Noise Frequency
vs Source Resistance
V
CE
= 5V
NF - NOISE FIGURE (dB)
BANDWIDTH = 15.7 kHz
Power Dissipation vs
Ambient Temperature
625
P
D
- POWER DISSIPATION (mW)
8
TO-92
500
375
250
125
0
6
I
C
= 10
µA
4
I
C
= 100
µA
SOT-23
3
2
0
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0
25
R
S
- SOURCE RESISTANCE (
Ω
)
50
75
100
TEMPERATURE (
o
C)
125
150
2
n
- EQUIVALENT INPUT NOISE CURRENT (pA/
√
Hz)
- EQUIVALENT INPUT NOISE VOLTAGE (
µ
V/
√
Hz)
Equivalent Input Noise Current
vs Collector Current
10
5
2
1
0.5
0.2
0.1
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
V
CE
= - 5.0V
,f=
H
1 00
z
Equivalent Input Noise Voltage
vs Collector Current
0.1
0.05
0.02
0.01
0.005
e n , f = 1.0 kHz
e n , f = 100 Hz
V
CE
= - 5.0V
in
z
kH
1.0
f=
,
z
i n
kH
10
f=
,
i n
0.002
0.001
0.001
e n , f = 10 kHz
2
n
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
√
i
√
e
1
2N5086 / MMBT5086 / 2N5087 / MMBT5087
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
R
S
- SOURCE RESISTANCE (
Ω
)
1,000,000
1,000,000
Contours of Constant
Narrow Band Noise Figure
dB
dB
10
6.0
100,000
4.0
1.0
dB
2.0
dB
dB
100,000
12
dB
8.0
dB
5.0
dB
3.0
dB
5.0
dB
8.0
dB
12
dB
V
CE
= - 5V
f = 100 Hz
BANDWIDTH = 15 Hz
10,000
4.0
dB
6.0
dB
10
dB
V
CE
= - 5V
f = 10 kHz
BANDWIDTH = 1.5 kHz
10,000
1,000
1,000
100
100
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
10
6.0
dB
4.0
dB
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
10,000
1,000,000
dB
V
CE
= - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
0
6.
dB
0
4.
5,000
dB
100,000
0
2.
dB
2,000
1,000
500
4.
0
6.0
dB
10,000
4.0
dB
dB
6.0
dB
10
dB
1,000
V
CE
= - 5V
f = 10 MHz
200
BANDWIDTH
= - 2 kHz
100
100
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
0.01
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
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