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2SC1050_2014

Description
Silicon NPN Power Transistors
File Size37KB,3 Pages
ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.
Websitehttp://www.jmnic.com/
Download Datasheet View All

2SC1050_2014 Overview

Silicon NPN Power Transistors

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1050
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
APPLICATIONS
・For
use in audio and general
purpose applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
300
6
1
40
150
-55~150
UNIT
V
V
V
A
W
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