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2SC4259

Description
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size16KB,4 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC4259 Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

2SC4259 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.02 A
Collector-based maximum capacity0.9 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1000 MHz
Base Number Matches1
2SC4259
Silicon NPN Epitaxial
Application
UHF RF amplifier
Outline

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