TIGER ELECTRONIC CO.,LTD
Product specification
Silicon NPN Power Transistor
DESCRIPTION
Silicon NPN, high power transistors in a plastic envelope, primarily
for use in high-speed power switching circuits.
Absolute Maximum Ratings ( Ta = 25
O
C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
MJE13010A
l
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
700
400
9
13.0
6.0
110
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-3PN
Electrical Characteristics ( Ta = 25 C)
O
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Symbol
Test Conditions
V
CE
=700V, I
E
=0
V
EB
=9V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=5V, I
C
=5.0A
V
CE
=5V, I
C
=8.0A
I
C
=12A,I
B
=3.0A
I
C
=8.0A,I
B
=1.6A
Min.
—
—
400
8
6
—
—
—
4
—
—
Typ.
—
—
—
—
—
—
—
—
—
180
1.7
Max.
1.0
1.0
—
40
30
3.0
1.5
1.6
—
—
4.0
Unit
mA
mA
V
I
CBO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn Off Time
V
V
MHz
pF
us
V
BE(sat)
I
C
=8.0A,I
B
=1.6A
f
T
C
ob
t
S
V
CE
=10V, I
C
=0.5A,f=1MHz
V
CB
=10V,I
E
=0,f=0.1MHz
I
B1
=-I
B2
=1.6A,T
P
=25
μ
s
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