MMBZ27VDA-V
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
3
• Dual silicon planar Zener diodes with common
anode configurations
• Dual package provides for bidirectional or
separate unidirectional configurations
1
2
Common anode
• The dual configurations protect two separate
lines with only one device
• Peak power: 40 W at 1 ms (bidirectional)
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
27
1
Pulse current
Dual
UNIT
V
mA
• For bidirectional operation, circuit connected to pins 1 and
2. For unidirectional operation, circuit connected to pins 1
and 3 or pins 2 and 3
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
MMBZ27VDA-V
MMBZ27VDA-V
ORDERING CODE
MMBZ27VDA-V-GS18
MMBZ27VDA-V-GS08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
15 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak power dissipation
(1)
Power dissipation on FR-5 board
(2)
T
amb
= 25 °C,
derate above 25 °C
T
amb
= 25 °C,
derate above 25 °C
TEST CONDITION
SYMBOL
P
PK
P
tot
VALUE
40
225
1.8
300
P
tot
R
thJA
T
j
, T
stg
2.4
556
- 55 to + 150
UNIT
W
mW
mW/K
mW
mW/K
K/W
°C
Power dissipation on alumina substrate
(3)
Thermal resistance, junction to ambient air
Storage temperature range
Notes
(1)
Nonrepetitive current pulse per figure 2 and derate above T
amb
= 25 °C per figure 3
(2)
FR-5 = 1" x 0.75" x 0.62"
(3)
Alumina = 0.4" x 0.3" x 0.024", 99.5 % alumina.
Rev. 1.2, 14-Sep-11
Document Number: 81294
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MMBZ27VDA-V
www.vishay.com
Vishay Semiconductors
MAX.
REVERSE
MAX.
VOLTAGE
TEMPERATURE
(CLAMPING
COEFFICIENT
VOLTAGE)
(2)
V
C
at I
RSM
V
38
V
Z
mV/°C
30
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
V
Z
at I
ZT1
V
MIN.
MMBZ27VDA-V
25.65
NOM.
27
MAX.
28.35
1
I
ZT1
mA
V
R
at I
R
V
MAX.
22
80
1
1.1
200
nA
TEST
CURRENT
REVERSE
VOLTAGE
MAX.
REVERSE
SURGE
CURRENT
I
PP
A
MAX.
FORWARD
VOLTAGE
V
F
at I
F
V
mA
Notes
(1)
V measured at pulse test current I
Z
ZT
at an ambient temperature of 25 °C
(2)
Surge current waveform per figure 2 and derate per figure 3
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
, Power Dissipation (mW)
250
Alumina
substrate
Peak pulse derating in % of peak
power or current at T
A
= 25 Z (°C)
200
18657
300
100
75
200
150
FR-5 board
50
100
50
0
25
0
0
25
50 75 100 125 17
T,Temperature (°C)
0
25
50
75 100 125 150 175 200
18655
T
A
- Ambient Temperature (°C)
Fig. 3 - Pulse Derating Curve
Fig. 1 - Steady State Power Derating Curve
t
r
Pulse width (t
p
) is defined as that
point where the peak current
decays to 50 % of I
RSM
t
r
≤
10 µs
Value (%)
100
Peak
value
- I
RSM
I
RSM
2
Half
value
-
50
t
p
0
0
1
2
3
4
5
18656
t - Time (ms)
Fig. 2 - Pulse Waveform
Rev. 1.2, 14-Sep-11
Document Number: 81294
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000