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K4H280838B-TCB0T

Description
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66
Categorystorage    storage   
File Size330KB,55 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4H280838B-TCB0T Overview

DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66

K4H280838B-TCB0T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionTSSOP, TSSOP66,.46
Reach Compliance Codeunknown
Maximum access time0.75 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width8
Number of terminals66
word count16777216 words
character code16000000
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length2,4,8
Maximum standby current0.03 A
Maximum slew rate0.375 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationDUAL
128Mb DDR SDRAM
DDR SDRAM Specification
Version 1.31
- 1 -
REV. 1.31 Nov. 3. 2001

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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