2SC4966
Silicon NPN Bipolar Transistor
Application
VHF & UHF wide band amplifire
MPAK
Features
• Low Ron and high performance for RF switch.
• Capable of high density mounting.
3
1
2
1. Emitter
2. Base
3. Collector
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
Ratings
12
8
3
100
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
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2SC4966
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector cutoff current
Symbol
V
(BR)CBO
I
CBO
I
CEO
Emitter cutoff current
I
EBO
h
FE
V
CE(sat)
Cob
Min
12
Typ
—
Max
—
Unit
V
Test conditions
I
C
= 10 µA
I
E
= 0
V
CB
= 10 V,
I
E
= 0
V
CE
= 8 V,
R
BE
=
∞
V
EB
= 3 V,
I
C
= 0
V
CE
= 5 V,
I
C
= 5 mA
mV
I
C
= 80mA
I
B
= 5mA
V
CB
= 5 V,
I
E
= 0, f = 1 MHz
I
B
= 2.5 mA
f = 1 kHz
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—
—
1
µA
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—
—
1
mA
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—
—
10
µA
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DC current transfer ratio
100
250
600
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Collector to emitter
saturation voltage
Output capacitance
—
150
200
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—
1.9
2.6
pF
Ω
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On resistance
Ron
—
1.2
—
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Note: Marking of 2SC4966 is "YW–".
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