2SB817 datasheet, PDF - EEWORLD Datasheet

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2SB817: Description12 A, 140 V, NPN, Si, POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size61KB，1 Pages; ManufacturerTiger Electronic Co.,Ltd.; Websitehttp://www.tgselec.com/

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2SB817 Overview

12 A, 140 V, NPN, Si, POWER TRANSISTOR

2SB817 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	12 A
Maximum Collector-Emitter Voltage	140 V
Processing package description	Plastic, TO-3PB, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Transistor type	universal power supply
Minimum DC amplification factor	20
Rated crossover frequency	15 MHz

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TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Silicon Power Ttransistors

2SD1047 / 2SB817

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Dissipation at

Max. Operating Junction Temperature

O

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

tot

T

j

T

stg

Value

160

140

6.0

12

1.2

100

150

-55~150

Unit

V

A

W

o

C

Storage Temperature

o

TO-3PN

ELECTRICAL CHARACTERISTICS ( Ta = 25 C)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Sustaining Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Current Gain Bandwidth Product

Collector Output Capacitance

Symbol

Test Conditions

V

CB

=140V, I

E

=0

V

EB

=6V, I

C

=0

I

C

=30mA, I

B

=0

V

CE

=5.0V, I

C

=1.0A

V

CE

=5.0V, I

C

=6.0A

Min.

—

140

60

20

—

Typ.

—

15

300

Max.

10

—

200

—

2.5

1.5

—

V

MHz

pF

Unit

uA

V

O

I

CEO

I

EBO

V

CEO

h

FE1

h

FE2

V

BE

f

T

C

OB

V

CE(sat)

I

C

=5.0A,I

B

=0.5A

V

CE

=5.0V,I

C

=1.0A

V

CE

=5.0V,I

C

=1.0A

V

CB

=-10V, I

E

=0, f=1MHz

Note : hfe1 Classification D: 60~120, E: 100~200

2SB817 Related Products

	2SB817	2SD1047
Description	12 A, 140 V, NPN, Si, POWER TRANSISTOR	12 A, 140 V, NPN, Si, POWER TRANSISTOR
Number of terminals	3	3
Transistor polarity	NPN	NPN
Maximum collector current	12 A	12 A
Maximum Collector-Emitter Voltage	140 V	140 V
Processing package description	Plastic, TO-3PB, 3 PIN	Plastic, TO-3PB, 3 PIN
state	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole
Terminal location	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	single	single
Number of components	1	1
transistor applications	amplifier	amplifier
Transistor component materials	silicon	silicon
Transistor type	universal power supply	universal power supply
Minimum DC amplification factor	20	20
Rated crossover frequency	15 MHz	15 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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