This product complies with the RoHS Directive (EU 2002/95/EC).
DA4X101F
Silicon epitaxial planar type
For high speed switching circuits
Features
Small reverse current I
R
Short reverse recovery time t
rr
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini4-G4-B
Name
Pin
1: Anode-1
2: Cathode-2
Basic Part Number
Dual DA2J101 (Parrarel, oppositely arranged)
3: Anode-2
4: Cathode-1
Marking Symbol: 22
Internal Connection
4
3
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) *: 1 t = 1 s
Symbol
V
R
V
RM
Single
Double
Single
Double
Single
Double
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
75
225
170
500
375
150
–55 to +150
Unit
V
V
mA
mA
mA
mA
mA
mA
°C
°C
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
V
R
I
R
C
t
t
rr
I
F
= 100 mA
I
R
= 100
µA
V
R
= 80 V
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V, I
rr
= 0.25
×
I
R
0.9
80
100
2.0
3
Conditions
Min
Typ
0.95
Max
1.20
Unit
V
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
t
p
10%
Output Pulse
t
r
t
I
F
t
rr
t
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
ZKF00150AED
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Pulse Generator
(PG-10N)
R
s
= 50
Ω
Publication date: March 2010
I
rr
=
0.25
×
I
R
I
F
=
10 mA
V
R
= 6 V
1
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semiconductors described in this book
(1)
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Consult our sales staff in advance for information on the following applications:
–
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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