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30KP70CA

Description
30000 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size387KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

30KP70CA Overview

30000 W, BIDIRECTIONAL, SILICON, TVS DIODE

30KP70CA Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
Minimum breakdown voltage77.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage70 V
technologyAVALANCHE
Base Number Matches1

30KP70CA Related Products

30KP70CA 30KP70 30KP70A 30KP70C
Description 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknow unknow unknow unknow
Base Number Matches 1 1 1 -
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Index Files: 2675  2551  2605  80  2583  54  52  53  2  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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