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TS8542VA

Description
Specification of High Power IR Emitting Diode Chip
File Size98KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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TS8542VA Overview

Specification of High Power IR Emitting Diode Chip

TS8542VA
www.vishay.com
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
1.066 x 1.066 x 0.17
• Peak wavelength:
λ
= 850 nm
• Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
GENERAL INFORMATION
DESCRIPTION
TS8542VA is a high power infrared, 850 nm surface emitting
diode in GaAlAs technology with high radiant power and
high speed. Polarity Confoguration is “n-up”.
The datasheet is based on Vishay optoelectronics sample
testing under certain predetermined and assumed
conditions, and is provided for illustration purpose only.
Customers are encouraged to perform testing in actual
proposed packaged and used conditions. Vishay
optoelectronics die products are tested using Vishay
optoelectronics based quality assurance procedures and
are manufactured using Vishay optoelectronics established
processes. Estimates such as those described and set forth
in this datasheet for semiconductor die will vary depending
on a number of packaging, handling, use, and other factors.
Therefore sold die may not perform on an equivalent basis
to standard package products.
PRODUCT SUMMARY
COMPONENT
TS8542VA
f
e
(mW)
350
ϕ
(deg)
55
λ
p
(nm)
850
t
r
(ns)
15
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TS8542VA-SF-F
Note
• MOQ: minimum order quantity
PACKAGING
Wafer sawn on foil
REMARKS
MOQ: 5000 pcs
PACKAGE FORM
Chip
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward current
Reverse voltage
Surge forward current
Junction temperature
Storage temperature range chip
Storage temperature range on foil
Temperature during packaging
t
p
< 10 s
t
p
= 100 μs
TEST CONDITION
SYMBOL
I
F
V
R
I
FSM
T
j
T
stg1
T
stg2
VALUE
1
5
5
140
- 40 to + 125
- 20 to + 65
280
UNIT
A
V
A
°C
°C
°C
°C
Rev. 1.1, 20-Feb-12
Document Number: 83474
1
For technical questions, contact:
optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

TS8542VA Related Products

TS8542VA TS8542VA-SF-F
Description Specification of High Power IR Emitting Diode Chip Specification of High Power IR Emitting Diode Chip

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