MMBTA44
TRANSISTOR(NP)
SOT–23
FEATURES
High Collector-Emitter Voltage
Complement to MMBTA94
MARKING: 3D
1. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
500
400
6
100
350
357
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
h
FE(3)
*
h
FE(4)
*
V
CE(sat)1
*
Collector-emitter saturation voltage
V
CE(sat)2
*
V
CE(sat)3
*
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
V
BE(sat)
*
C
ob
C
ib
Test
conditions
Min
500
400
6
0.1
0.1
40
50
45
40
0.4
0.5
0.75
0.75
7
130
V
V
V
V
pF
pF
200
Typ
Max
Unit
V
V
V
µA
µA
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=400V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CB
=20V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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