FMMT4124
TRANSISTOR (NPN)
SOT–23
FEATURES
Switching Application
MARKING:ZC
1. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
200
330
378
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Emitter input capacitance
*Pulse test
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
V
CE(sat)
*
V
BE(sat)
*
f
T
C
ob
C
Ib
Test
conditions
Min
30
25
5
50
50
120
60
0.3
0.95
300
4
8
V
V
MHz
pF
pF
360
Typ
Max
Unit
V
V
V
nA
nA
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=2mA
V
CE
=1V, I
C
=50mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=20V,I
C
=10mA,
f=100MHz
V
CB
=5V, I
E
=0, f=140KHz
V
BE
=0.5V, I
E
=0, f=140KHz
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
京公网安备 11010802033920号
EEWORLD
