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MBRF16200CT

Description
20 A, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size119KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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MBRF16200CT Overview

20 A, SILICON, RECTIFIER DIODE, TO-220AB

SIYU
R
MBRF1640CT ...... MBRF16200CT
Schottky Barrier Rectifier
Reverse Voltage 40 to 200 V
Forward Current 16A
特征
Features
·大电流承受½力。High
Current Capability
·正向压降½。Low
Forward Voltage Drop
·½功耗高效率。Low
Power Loss,High Efficiency
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
肖特基二极管
反向电压
40---200V
正向电流
16 A
ITO-220AB
机械数据
Mechanical Data
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
Unit:mm
·安装½½:
任意
Mounting Position: Any
·安装扭距:
推荐值
0.3牛*米
Mounting torque:
Recommend 0.3 N*m
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Ratings at 25℃ ambient temperature unless otherwise specified.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Symbols
1640CT 1645CT 1650CT 1660CT 16100CT 16150CT 16200CT
单½
Unit
V
V
V
A
A
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
V
RRM
40
28
40
45
31
45
50
35
50
60
42
60
16
150
100
70
100
150
105
150
200
140
200
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJC
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
1.5
-55 --- +150
3.5
/W
工½结温和存储温度
Operating junction and storage temperature range
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Symbols
1640CT 1645CT 1650CT 1660CT 16100CT 16150CT 16200CT
符号
V
F
I
R
单½
Unit
V
mA
pF
最大正向电压
Maximum forward voltage
I
F
=8A
T
J
= 25℃
T
J
= 100℃
0.63
0.10
15
400
0.75
0.85
0.15
150
310
0.95
0.99
最大反向电流
Maximum reverse current
典型结电容
Type junction capacitance
V
R
=
4.0V, f = 1MHz
Cj
大昌电子
DACHANG ELECTRONICS

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