DH50103-51-T10 datasheet, PDF - EEWORLD Datasheet

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DH50103-51-T10: Description100V, SILICON, PIN DIODE, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor diode; File Size53KB，2 Pages; ManufacturerRakon Limited

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DH50103-51-T10 Overview

100V, SILICON, PIN DIODE, PLASTIC PACKAGE-3

DH50103-51-T10 Parametric

Parameter Name	Attribute value
Maker	Rakon Limited
package instruction	R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
application	SWITCHING
Minimum breakdown voltage	100 V
Configuration	SINGLE
Maximum diode capacitance	0.35 pF
Diode component materials	SILICON
Maximum diode forward resistance	3 Ω
Diode type	PIN DIODE
frequency band	S BAND
JESD-30 code	R-PDSO-G3
Minority carrier nominal lifetime	0.5 µs
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal form	GULL WING
Terminal location	DUAL

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SILICON PIN DIODES

Plastic package Surface Mount switching silicon PIN diodes

PLASTIC PACKAGE SURFACE MOUNT SWITCHING

SILICON PIN DIODES

Description

TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.

This product family is designed for a low cost, medium to high volume market that may be supplied

in tape and reel for automated pick and place assembly on surface mount circuit boards.

The use of this technology eliminates wire bonding on to the chips.

Applications

The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF)

and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching

time and low switching current.

TEMEX’ diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak

power, RF and microwave applications (up to 3 GHz).

Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems)

and ﬁlter switches, phase shifters ....

Note:

To reduce the distortion, it is necessary to verify and design with the following formula:

πτ

<< 1

RF peak current (A)

Diode minority carrier lifetime (s)

DC bias current (A)

Application frequency (Hz)

πF

12-6

Vol. 1

SALES OFFICES: VISIT OUR WEB SITE AT

http://www.temex.net

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