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D3SB20

Description
2.3 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size132KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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D3SB20 Overview

2.3 A, SILICON, BRIDGE RECTIFIER DIODE

SIYU
R
塑封硅整流桥堆
反向电压
50---800V
正向电流
4 A
KBJ
.134(3.4)
.122(3.1)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
¢.134(8.4)
.122(3.1)
D3SB05 ...... D3SB80
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 800V
Forward Current 4 A
特征
Features
·反向漏电流½
Low reverse leakage
High forward surge capability
Surge
overload rating: 120 Amperes peak
.382(9.7)
.366(9.3)
.995(25.3)
.983(24.7)
.602(15.3)
.578(14.7)
.157
(4.0)
·正向浪涌承受½力较强
·浪涌承受½力:120A
.074(1.9)
.059(1.5)
.708(18.0)
.669(17.0)
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.043(1.1)
.035(0.9)
+
~
~
-
.146(3.7)
.130(3.3)
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
.114(2.8)
.098(2.5)
机械数据
Mechanical Data
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
·安装½½:
任意
Mounting Position: Any
·安装扭距:
推荐值
0.3牛*米
Mounting torque:
Recommend 0.3 N*m
.031(0.8)
.023(0.6)
.303(7.7)
.287(7.3)
.303(7.7) .303(7.7)
.287(7.3) .287(7.3)
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Ratings at 25℃ ambient temperature unless otherwise specified.
D3SB
Symbols
05
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
TC =100℃
最大正向平均整流电流
Maximum average forward rectified current
D3SB
10
100
70
100
D3SB
20
200
140
200
D3SB
40
400
280
400
D3SB
60
600
420
600
D3SB
80
800
560
800
单½
Unit
V
V
V
A
A
℃/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJC
Tj, TSTG
50
35
50
4.0
120
5.5
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55--- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
D3SB
05
D3SB
10
D3SB
20
D3SB
40
D3SB
60
D3SB
80
单½
Unit
V
μA
I
F
= 2.0A
TA= 25℃
TA = 125℃
V
F
1.05
10
500
40
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
I
R
Cj
pF
大昌电子
DACHANG ELECTRONICS

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