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DDB6U100N10R

Description
Bridge Rectifier Diode, 100A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size180KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

DDB6U100N10R Overview

Bridge Rectifier Diode, 100A, 1000V V(RRM),

DDB6U100N10R Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationBRIDGE, 6 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.55 V
Maximum non-repetitive peak forward current650 A
Number of components6
Maximum operating temperature150 °C
Maximum output current100 A
Maximum repetitive peak reverse voltage1000 V
European Power-
Semiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
DD B6U 100 N 10...16..R
(ECONO)
80
104,8
80
70,4
60,96
15,24
5,5
N-
R
P+
S
N-
P+
T
3,81
11,43
57,15
93
±0,2
max. 107,5
P+ 13
R
S
T
1-4
5-8
9-12
P+ 16
N- 14
N- 17
VWK Sep. 1996

DDB6U100N10R Related Products

DDB6U100N10R DDB6U100N12R DDB6U100N14R
Description Bridge Rectifier Diode, 100A, 1000V V(RRM), Bridge Rectifier Diode, 100A, 1200V V(RRM), Bridge Rectifier Diode, 100A, 1400V V(RRM),
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.55 V 1.55 V 1.55 V
Maximum non-repetitive peak forward current 650 A 650 A 650 A
Number of components 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 100 A 100 A 100 A
Maximum repetitive peak reverse voltage 1000 V 1200 V 1400 V
Maker Infineon - Infineon

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