BF659 datasheet, PDF - EEWORLD Datasheet

BF659: Description100mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39; CategoryDiscrete semiconductor The transistor; File Size124KB，3 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BF659 Overview

100mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	7 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	90 MHz

	BF659	BF658
Description	100mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39	100mA, 250V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Is it Rohs certified?	incompatible	incompatible
Maker	STMicroelectronics	STMicroelectronics
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	300 V	250 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25
JEDEC-95 code	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	175 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	7 W	7 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	90 MHz	90 MHz

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