DTA143 TM/DTA143 TE/DTA143 TUA
DTA143 TKA/DTA143 TSA/DTA143 TCA
DIGITAL TRANSISTOR (PNP)
FEATURES
1.
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external inputresistors(see equivalent circuit).
2.
The bias resistors consist of thin-film resistors with complete isolation
to allow
positive
biasing of the input.They also have the advantage of
almost
completely eliminating parasitic effects.
Equivalent circuit
3.
Only the on/off conditions need to be set for operation, making device design easy.
PIN CONNENCTIONS AND MARKING
DTA143TE
DTA143TUA
SOT-523
Addreviated symbol: 93
SOT-323
Addreviated symbol: 93
DTA143TKA
DTA143TCA
DTA114ECA
SOT-23-3L
Addreviated symbol: 93
SOT-23
Addreviated symbol: 93
DTA143TSA
DTA143TM
DTA114ECA
SOT-723
TO-92S
Addreviated symbol: 93
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
DTA143 TM/DTA143 TE/DTA143 TUA
DTA143 TKA/DTA143 TSA/DTA143 TCA
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base
voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
Tj
Tstg
100
150
150
-55~150
Limits (DTA143T□ )
M
E
UA
-50
-50
-5
-100
200
300
CA
KA
SA
Unit
V
V
V
mA
mW
℃
℃
Collector-emitter voltage
Emitter-base
voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
100
3.29
4.7
250
Min.
-50
-50
-5
-0.5
-0.5
-0.3
600
6.11
KΩ
MHz
V
CE
=-10V ,I
E
=5mA,f=100MHz
Typ
Max.
Unit
V
V
V
µA
µA
V
Conditions
Ic=-50µA
Ic=-1mA
I
E
=-50µA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA,I
B
=-0.25mA
V
CE
=-5V,I
C
=-1mA
Typical Characteristics
２
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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