EEWORLDEEWORLDEEWORLD

Part Number

Search

EGP30B

Description
3 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size117KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
Download Datasheet Compare View All

EGP30B Online Shopping

Suppliers Part Number Price MOQ In stock  
EGP30B - - View Buy Now

EGP30B Overview

3 A, 100 V, SILICON, RECTIFIER DIODE

SIYU
R
EGP30A ...... EGP30G
Plastic Ultra-Fast Recover Rectifier
Reverse Voltage 50 to 400V
Forward Current 3.0A
特征
Features
塑封超快速整流二极管
反向电压
50 --- 400 V
正向电流
3.0 A
DO-27
·反向漏电流½
Low reverse leakage
·正向浪涌承受½力较强
High forward surge capability
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管½皆符合ROHS标准 。
Lead and body according with ROHS standard
1.0(25.4)
MIN
.052(1.3)
DIA
.048(1.2)
.375(9.5)
.335(8.5)
.220(5.6)
DIA
.197(5.0)
1.0(25.4)
MIN
机械数据
Mechanical Data
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
EGP
30A
50
35
50
EGP
30B
100
70
100
EGP
30C
150
105
150
3.0
EGP
30D
200
140
200
EGP
30F
300
210
300
EGP
30G
400
280
400
单½
Unit
V
V
V
A
A
℃/W
V
RRM
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
125
15
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
EGP
30A
EGP
30B
EGP
30C
0.95
EGP
30D
EGP
30F
1.25
EGP
30G
单½
Unit
V
μA
nS
I
F
= 3.0A
TA= 25℃
TA=100℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
V
F
I
R
trr
C
j
最大反向电流
Maximum reverse current
10
100
50
95
75
最大反向恢复时间
MAX. Reverse Recovery Time
典型结电容
Type junction capacitance
V
R
= 4.0V, f = 1MHz
pF
大昌电子
DACHANG ELECTRONICS

EGP30B Related Products

EGP30B EGP30A_15 EGP30C EGP30D EGP30F EGP30A EGP30G
Description 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 150 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 936  223  2399  1470  2540  19  5  49  30  52 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号