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ER102

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size117KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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ER102 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

SIYU
R
塑封超快速整流二极管
反向电压
50 --- 600 V
正向电流
1.0 A
特征
Features
DO-41
ER100 ...... ER106
Plastic Super Fast Recover Rectifier
Reverse Voltage 50 to 600V
Forward Current 1.0A
·反向漏电流½
Low reverse leakage
·正向浪涌承受½力较强
High forward surge capability
.034(0.9)
DIA
.028(0.7)
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
.107(2.7)
DIA
.080(2.0)
1.0(25.4)
MIN
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据
Mechanical Data
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
ER100 ER101 ER101A ER102 ER103 ER104 ER106
单½
Unit
V
V
V
A
A
℃/W
V
RRM
50
35
50
100
70
100
150
105
150
200
140
200
1.0
30
65
300
210
300
400
280
400
600
420
600
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
ER100 ER101 ER101A ER102 ER103 ER104 ER106
0.95
5.0
100
35
17
1.3
1.7
单½
Unit
V
μA
nS
pF
I
F
= 1.0A
TA= 25℃
TA=100℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
V
F
I
R
trr
C
j
最大反向电流
Maximum reverse current
最大反向恢复时间
MAX. Reverse Recovery Time
典型结电容
Type junction capacitance
V
R
= 4.0V, f = 1MHz
大昌电子
DACHANG ELECTRONICS

ER102 Related Products

ER102 ER100 ER101 ER101A ER103 ER104 ER106 ER100_15
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 150 V, SILICON, SIGNAL DIODE, DO-41 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
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