FMMT449 datasheet, PDF - EEWORLD Datasheet

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FMMT449: Description1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size360KB，1 Pages; ManufacturerHTSEMI（ Jin Yu Semiconductor ）; Websitehttp://www.htsemi.com

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FMMT449 Overview

1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

FMMT449 Parametric

Parameter Name	Attribute value
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	30 V
Number of terminals	3
Processing package description	SOT-23, 3 PIN
state	Active
structure	SINGLE
Minimum DC amplification factor	40
jesd_30_code	R-PDSO-G3
Number of components	1
Maximum operating temperature	150 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
larity_channel_type	NPN
wer_dissipation_max__abs_	0.4250 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Rated crossover frequency	150 MHz

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FMMT449

TRANSISTOR (NPN)

FEATURES



Low Equivalent On-Resistance

SOT–23

MARKING: 449

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

ΘJA

T

j

T

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

50

30

5

1

200

625

150

-55½+150

Unit

V

A

mW

℃/W

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE(1)

*

DC current gain

h

FE(2)

*

h

FE(3)

*

h

FE(4)

*

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

*Pulse test

V

CE(sat)1

*

V

CE(sat)2

*

V

BE(sat)

*

V

BE

*

f

T

C

ob

Test

conditions

Min

50

30

5

0.1

70

100

80

40

0.5

1

1.25

1

150

15

V

MHz

pF

300

Typ

Max

Unit

V

µA

I

C

=1mA, I

E

=0

I

C

=10mA, I

B

=0

I

E

=100µA, I

C

=0

V

CB

=40V, I

E

=0

V

EB

=4V, I

C

=0

V

CE

=2V, I

C

=50mA

V

CE

=2V, I

C

=500mA

V

CE

=2V, I

C

=1A

V

CE

=2V, I

C

=2A

I

C

=1A, I

B

=100mA

I

C

=2A, I

B

=200mA

I

C

=1A, I

B

=100mA

V

CE

=2V, I

C

=1A

V

CE

=10V,I

C

=50mA,

f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

１　

JinYu

semiconductor

www.htsemi.com

Ｄ½½½：２０１１／０５

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