FMMT591
TRANSISTOR (PNP)
SOT-23
FEATURES
Low equivalent on-resistance
1.
BASE
Marking :591
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
2.
EMITTER
3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
1
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
I
C
=-
100
μA,
I
E
=0
I
C
=-
10
mA, I
B
=0
I
E
=-
100
μA,
I
C
=0
V
CB
=-
60
V, I
E
=0
V
EB
=-
4
V, I
C
=0
V
CE
=-
5
V, I
C
=-
1
mA
V
CE
=-
5
V, I
C
=-
500
mA
V
CE
=-
5
V, I
C
=-
1
A
V
CE
=-
5
V, I
C
=-2A
I
C
=-
500
mA, I
B
=-
50
mA
I
C
=-
1
A, I
B
=-
100
mA
I
C
=-
1
A, I
B
=-
100
mA
V
CE
=-
5
V, I
C
=-
1
A
V
CE
=-
10
V,I
C
=-
50
mA,,f=
100
MHz
V
CB
=-
10
V,f=
1
MHz
-80
-60
-5
-0.1
-0.1
100
100
80
15
-0.3
-0.6
-1.2
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
μA
μA
DC current gain
h
FE(2)
1
h
FE(3)
1
h
FE(4)
1
300
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
1
V
CE(sat)1
1
V
CE(sat)2
V
BE(sat)
V
BE
1
1
V
V
V
V
MHz
1
-1
150
10
f
T
C
ob
pF
Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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